Invention Grant
- Patent Title: Priming material for substrate coating
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Application No.: US14788321Application Date: 2015-06-30
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Publication No.: US10655019B2Publication Date: 2020-05-19
- Inventor: Ya-Ling Cheng , Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: B05D1/00
- IPC: B05D1/00 ; C09D5/00 ; H01L21/027 ; H01L21/67 ; C09D7/20 ; G03F7/16 ; B05D5/12 ; B05D7/00 ; B05D3/02 ; B05D3/12

Abstract:
A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and applying a priming material to the substrate. The applying of the priming material may include rotating the substrate to disperse the priming material radially on the substrate. In the embodiment, the priming material includes a solvent with at least six carbon atoms per molecule. A film-forming material is applied to the substrate on the priming material, and the application includes rotating the substrate to disperse the film-forming material radially on the substrate. The priming material and the film-forming material are evaporated to leave a component of the film-forming material in a solid form. In various embodiments, the priming material is selected based on at least one of an evaporation rate, a viscosity, or an intermolecular force between the priming material and the film-forming material.
Public/Granted literature
- US20170002208A1 Priming Material for Substrate Coating Public/Granted day:2017-01-05
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