Invention Grant
- Patent Title: Source/drain performance through conformal solid state doping
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Application No.: US16018692Application Date: 2018-06-26
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Publication No.: US10665452B2Publication Date: 2020-05-26
- Inventor: Qi Xie , David de Roest , Jacob Woodruff , Michael Eugene Givens , Jan Willem Maes , Timothee Blanquart
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holdings B.V.
- Current Assignee: ASM IP Holdings B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/265 ; H01L29/36 ; H01L29/417 ; H01L21/225 ; H01L29/08
Abstract:
A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.
Public/Granted literature
- US20180308686A1 SOURCE/DRAIN PERFORMANCE THROUGH CONFORMAL SOLID STATE DOPING Public/Granted day:2018-10-25
Information query
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