Invention Grant
- Patent Title: Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition
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Application No.: US16242184Application Date: 2019-01-08
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Publication No.: US11033930B2Publication Date: 2021-06-15
- Inventor: Chang Ke , Song-Moon Suh , Liqi Wu , Michael S. Jackson , Lei Zhou , Biao Liu , Cheng Pan , Paul F. Ma , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: B05D3/04
- IPC: B05D3/04 ; B05D1/00 ; C23C16/455 ; C23C16/04 ; H01L21/02 ; H01L21/3105 ; H01L21/321 ; B05D1/18
Abstract:
Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.
Public/Granted literature
- US20190210061A1 Methods And Apparatus For Cryogenic Gas Stream Assisted SAM-Based Selective Deposition Public/Granted day:2019-07-11
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