- Patent Title: BaSnO3 thin flim and low-temperature preparation method therefor
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Application No.: US16090953Application Date: 2017-04-04
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Publication No.: US11034590B2Publication Date: 2021-06-15
- Inventor: Jun Hong Noh , Seong Sik Shin , Jang Won Seo , Sang Il Seok
- Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY , UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Applicant Address: KR Daejeon; KR Ulsan
- Assignee: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY,UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Current Assignee: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY,UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Current Assignee Address: KR Daejeon; KR Ulsan
- Agency: McCoy Russell LLP
- Priority: KR10-2016-0040923 20160404
- International Application: PCT/KR2017/003702 WO 20170404
- International Announcement: WO2017/176038 WO 20171012
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C01G19/00 ; B05D1/00 ; B05D3/02 ; H01G9/20 ; H01L51/42
Abstract:
The present invention relates to a method for preparing a BaSnO3 thin film, comprising the steps of: a) precipitating an amorphous precipitate by adding an alkaline aqueous solution to a mixture solution comprising a barium salt, a tin salt, hydrogen peroxide, and an organic acid; b) preparing a crystalline BaSnO3 precursor material by preheating the mixture solution containing the amorphous precipitate; c) preparing a dispersion solution by dispersing the crystalline BaSnO3 precursor material in a polar organic solvent; d) coating the dispersion solution on a substrate; and e) preparing a BaSnO3 thin film of a perovskite structure by heat treating the dispersion solution coated on the substrate.
Public/Granted literature
- US20200325032A1 BASNO3 THIN FILM AND LOW-TEMPERATURE PREPARATION METHOD THEREFOR Public/Granted day:2020-10-15
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