Invention Grant
- Patent Title: Method for processing an ultra-high density space interconnect lead under light source guidance
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Application No.: US17037909Application Date: 2020-09-30
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Publication No.: US11211357B2Publication Date: 2021-12-28
- Inventor: Yun Chen , Shuquan Ding , Yunbo He , Maoxiang Hou , Xin Chen , Jian Gao , Ni Zhao , Lanyu Zhang , Zhengping Wang
- Applicant: GUANGDONG UNIVERSITY OF TECHNOLOGY
- Applicant Address: CN Guangdong
- Assignee: GUANGDONG UNIVERSITY OF TECHNOLOGY
- Current Assignee: GUANGDONG UNIVERSITY OF TECHNOLOGY
- Current Assignee Address: CN Guangdong
- Priority: CN202010018794.X 20200108
- Main IPC: H01L23/00
- IPC: H01L23/00 ; B23K20/00 ; B23K26/34 ; B23K37/047 ; B23K101/32 ; B23K103/00 ; B23K103/08 ; B23K101/38
Abstract:
A method for processing an ultra-high density interconnect wire under light source guidance, comprising preparing a photo-thermal response conductive paste, and putting it into an air pressure injector; driving the air pressure injector; the air pressure injector extrudes the photo-thermal response conductive paste, so that the photo-thermal response conductive paste is connected with the first chip to form an interconnection wire; stopping extruding the photo-thermal response conductive paste, and driving the air pressure injector to pull off the interconnection wire; a linear light source emits light and irradiates on the interconnection wire to bend to an upper side of a second chip bonding pad; an extrusion mechanism presses a free end of the interconnection wire on the second chip bonding pad; the first chip and the second chip are subjected to glue dripping encapsulation.
Public/Granted literature
- US20210210461A1 METHOD FOR PROCESSING AN ULTRA-HIGH DENSITY SPACE INTERCONNECT LEAD UNDER LIGHT SOURCE GUIDANCE Public/Granted day:2021-07-08
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