Invention Grant
- Patent Title: Tunable and reconfigurable atomically thin heterostructures
-
Application No.: US16326856Application Date: 2017-08-23
-
Publication No.: US11293116B2Publication Date: 2022-04-05
- Inventor: Anthony Vargas , Fangze Liu , Christopher Adrian Lane , Daniel Rubin , Swastik Kar , Arun Bansil , Gianina Buda , Zachariah Hennighausen
- Applicant: Northeastern University
- Applicant Address: US MA Boston
- Assignee: Northeastern University
- Current Assignee: Northeastern University
- Current Assignee Address: US MA Boston
- Agency: Hamilton, Brook, Smith & Reynolds, P.C.
- International Application: PCT/US2017/048191 WO 20170823
- International Announcement: WO2018/039329 WO 20180301
- Main IPC: C30B25/02
- IPC: C30B25/02 ; C30B29/46 ; C30B29/68 ; C30B30/00 ; C30B33/02 ; C30B33/04 ; G11B7/1369 ; H01L21/02

Abstract:
Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.
Public/Granted literature
- US20190211474A1 TUNABLE AND RECONFIGURABLE ATOMICALLY THIN HETEROSTRUCTURES Public/Granted day:2019-07-11
Information query
IPC分类: