公开(公告)号：US11293116B2

公开(公告)日：2022-04-05

申请号：US16326856

申请日：2017-08-23

Applicant: Northeastern University

Inventor： Anthony Vargas ,  Fangze Liu ,  Christopher Adrian Lane ,  Daniel Rubin ,  Swastik Kar ,  Arun Bansil ,  Gianina Buda ,  Zachariah Hennighausen

IPC: C30B25/02 ,  C30B29/46 ,  C30B29/68 ,  C30B30/00 ,  C30B33/02 ,  C30B33/04 ,  G11B7/1369 ,  H01L21/02

Abstract: Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

公开(公告)号：US20190211474A1

公开(公告)日：2019-07-11

申请号：US16326856

申请日：2017-08-23

Applicant: Northeastern University

Inventor： Anthony Vargas ,  Fangze Liu ,  Christopher Adrian Lane ,  Daniel Rubin ,  Swastik Kar ,  Arun Bansil ,  Gianina Buda ,  Zachariah Hennighausen

IPC: C30B29/46 ,  C30B29/68 ,  C30B33/04 ,  C30B25/02 ,  C30B33/02 ,  G11B7/1369

CPC classification number: C30B29/46 ,  C30B25/02 ,  C30B29/68 ,  C30B30/00 ,  C30B33/02 ,  C30B33/04 ,  G11B7/1369 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/02568 ,  H01L21/0262

Abstract: Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

公开(公告)号：US20150243826A1

公开(公告)日：2015-08-27

申请号：US14423636

申请日：2013-08-27

Applicant: Northeastern University

Inventor： Xiaohong An ,  Fangze Liu ,  Swastik Kar

IPC: H01L31/112 ,  H01L31/18 ,  H01L31/028

CPC classification number: H01L31/112 ,  H01L31/028 ,  H01L31/109 ,  H01L31/1804

Abstract: Provided in one embodiment is a method for operating a photodiode device, which device comprises: at least one layer of an n-doped semiconductor material; two portions of a dielectric material separately disposed over separate regions of the at least one layer of the n-doped semiconductor material; at least one monolayer of a carbon-based material disposed between the two portions of dielectric material and over the at least one layer of the n-doped semiconductor material; two terminal electrodes, each electrode disposed in electrical communication with a respective one of the portions of dielectric material; and a gate electrode in electrical communication with the at least one layer of the n-doped semiconductor material. The method comprises: applying a voltage across the gate electrode and one of the two terminal electrodes; and exposing the photodiode device to electromagnetic radiation.

Abstract translation: 在一个实施例中提供了一种用于操作光电二极管器件的方法，该器件包括：至少一层n掺杂半导体材料; 介电材料的两部分分别设置在n掺杂半导体材料的至少一层的分离区域上; 设置在电介质材料的两个部分之间并且在n掺杂半导体材料的至少一个层上的碳基材料的至少一个单层; 两个端子电极，每个电极设置成与电介质材料的相应部分电连通; 以及栅电极，与n掺杂半导体材料的至少一层电连通。 该方法包括：在栅电极和两个端电极中的一个之间施加电压; 以及将所述光电二极管器件暴露于电磁辐射。