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公开(公告)号：US20230409951A1
公开(公告)日：2023-12-21
申请号：US18250648
申请日：2021-11-23
Applicant: Northeastern University , Academia Sinica , Temple University-Of The Commonwealth System Of Higher Education
Inventor： Jeng-Yuan Tsai , Jinbo Pan , Hsin Lin , Arun Bansil , Qimin Yan
CPC classification number: G06N10/40 , G06N10/20 , H01L29/66977 , H01L29/66984
Abstract: Anion antisite defects in monolayer Transition Metal Dichalcogenide (TMD) systems are here identified as two-dimen-sional solid-state defect qubits. The proposed antisites in these TMDs host paramagnetic triplet ground states with flexible level splitting. A viable transition loop between the triplet and singlet defect states is demonstrated, including optical excitations/relaxations and nonradiative decay paths for the antisites as qubits. A complete set of qubit operational processes, including initialization, manipulation, and readout, is delineated.
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公开(公告)号：US20170098760A1
公开(公告)日：2017-04-06
申请号：US15283609
申请日：2016-10-03
Applicant: National University of Singapore , National Sun Yat-Sen University , National Tsing Hua University , Northeastern University
Inventor： Hsin Lin , Wei-Feng Tsai , Cheng-Yi Huang , Horng-Tay Jeng , Tay-Rong Chang , Gaurav Gupta , Gengchiau Liang , Arun Bansil
CPC classification number: H01L29/66984 , H01L29/0673 , H01L29/22 , H01L29/78648 , H01L29/78681
Abstract: Transition metal dichalcogenide (TMD)-based spintronics devices, each including a TMD thin film layer, a first gate electrode, a first insulating layer sandwiched between the TMD thin film layer and the first gate electrode, a second gate electrode, and a second insulating layer sandwiched between the TMD thin film layer and the second gate electrode. Such a device, when also including a source electrode and a drain electrode, functions as a spin filter. On the other hand, when also including one source electrode and two drain electrode terminals, such a device functions as a spin separator. Also disclosed are methods of using the above-described TMD-based spintronics devices.
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Patent Agency Ranking
公开(公告)号：US20150204803A1
公开(公告)日：2015-07-23
申请号：US14462109
申请日：2014-08-18
Applicant: Northeastern University , Japan Synchrotron Radiation Research Institute , Gunma University
Inventor： Arun Bansil , Bernardo Barbiellini , Yoshiharu Sakurai , Masayoshi Itou , Hiroshi Sakurai , Kosuke Suzuki
IPC: G01N23/20
CPC classification number: G01N23/20066
Abstract: The present application relates to methods of determining a concentration of an element, such as lithium, using analysis of a Compton scattering spectrum's lineshape.
Abstract translation: 本申请涉及使用康普顿散射光谱线形分析测定元素（如锂）的浓度的方法。
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公开(公告)号：US11293116B2
公开(公告)日：2022-04-05
申请号：US16326856
申请日：2017-08-23
Applicant: Northeastern University
Inventor： Anthony Vargas , Fangze Liu , Christopher Adrian Lane , Daniel Rubin , Swastik Kar , Arun Bansil , Gianina Buda , Zachariah Hennighausen
Abstract: Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.
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公开(公告)号：US20190211474A1
公开(公告)日：2019-07-11
申请号：US16326856
申请日：2017-08-23
Applicant: Northeastern University
Inventor： Anthony Vargas , Fangze Liu , Christopher Adrian Lane , Daniel Rubin , Swastik Kar , Arun Bansil , Gianina Buda , Zachariah Hennighausen
CPC classification number: C30B29/46 , C30B25/02 , C30B29/68 , C30B30/00 , C30B33/02 , C30B33/04 , G11B7/1369 , H01L21/02485 , H01L21/02499 , H01L21/02505 , H01L21/02568 , H01L21/0262
Abstract: Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.
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公开(公告)号：US09548382B2
公开(公告)日：2017-01-17
申请号：US14434483
申请日：2013-10-11
Applicant: Northeastern University , National Sun Yat-sen University , National Tsing Hua University
Inventor： Horng-Tay Jeng , Tay-Rong Chang , Arun Bansil , Hsin Lin , Wei-Feng Tsai , Cheng-Yi Huang
CPC classification number: H01L29/66984 , B82Y10/00 , B82Y40/00 , H01L29/1606 , H01L29/66431 , H01L29/7613 , H01L29/7781 , H01L43/08
Abstract: Provided in one embodiment is a device, comprising: a substrate; and a layer disposed over the substrate, wherein the layer comprises a monolayer of crystals comprising a Group IV element.
Abstract translation: 在一个实施例中提供了一种装置，包括：基板; 以及设置在所述衬底上的层，其中所述层包括包含IV族元素的单层晶体。
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公开(公告)号：US20150270376A1
公开(公告)日：2015-09-24
申请号：US14434483
申请日：2013-10-11
Applicant: Northeastern University , National Sun Yatesen University , National Tsing Hua University
Inventor： Horng-Tay Jeng , Tay-Rong Chang , Arun Bansil , Hsin Lin , Wei-Feng Tsai , Cheng-Yi Huang
CPC classification number: H01L29/66984 , B82Y10/00 , B82Y40/00 , H01L29/1606 , H01L29/66431 , H01L29/7613 , H01L29/7781 , H01L43/08
Abstract: Provided in one embodiment is a device, comprising: a substrate; and a layer disposed over the substrate, wherein the layer comprises a monolayer of crystals comprising a Group IV element.
Abstract translation: 在一个实施例中提供了一种装置，包括：基板; 以及设置在所述衬底上的层，其中所述层包括包含IV族元素的单层晶体。
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