Invention Grant
- Patent Title: Multilayer structure and method of forming the same
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Application No.: US15941165Application Date: 2018-03-30
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Publication No.: US11462746B2Publication Date: 2022-10-04
- Inventor: Shingo Yagyu , Takuto Igawa , Toshimi Hitora
- Applicant: FLOSFIA INC.
- Applicant Address: JP Kyoto
- Assignee: FLOSFIA INC.
- Current Assignee: FLOSFIA INC.
- Current Assignee Address: JP Kyoto
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPJP2017-073296 20170331
- Main IPC: H01M8/0228
- IPC: H01M8/0228 ; H01M8/026 ; H01M8/0206 ; C23C16/448 ; C23C16/40 ; H01M8/0215 ; H01M8/10 ; H01M8/021

Abstract:
In a first aspect of a present inventive subject matter, a multilayer structure includes a base with a surface and an electrically-conductive metal oxide film that is positioned directly or via another layer on the base. At least a part of the surface of the base contains as a major component at least one selected from the group of copper, copper alloy, aluminum, aluminum alloy, magnesium, magnesium alloy, and stainless steel. The electrically-conductive metal oxide film is 30 nm or more in thickness. The multilayer structure is electrically-conductive and has a contact resistance that is 100 mΩcm2 or less.
Public/Granted literature
- US20180287169A1 MULTILAYER STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2018-10-04
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