Invention Grant
- Patent Title: Memory control method, memory storage device and memory control circuit unit
-
Application No.: US16529807Application Date: 2019-08-02
-
Publication No.: US11573704B2Publication Date: 2023-02-07
- Inventor: Wei Lin , Yu-Cheng Hsu , Hsiao-Yi Lin , Yu-Siang Yang
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW108118844 20190530
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G11C16/26 ; G11C16/04

Abstract:
A memory control method, a memory storage device and a memory control circuit unit are provided. The method includes: reading a first physical unit among a plurality of physical units based on a first electrical configuration to obtain first soft information; reading the first physical unit based on a second electrical configuration which is different from the first electrical configuration to obtain second soft information; classifying a plurality of memory cells in the first physical unit according to the first soft information and the second soft information; and decoding data read from the first physical unit according to a classification result of the memory cells.
Public/Granted literature
- US20200379654A1 MEMORY CONTROL METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT Public/Granted day:2020-12-03
Information query