Invention Grant
- Patent Title: Substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate
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Application No.: US17646345Application Date: 2021-12-29
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Publication No.: US11640911B2Publication Date: 2023-05-02
- Inventor: Tatsuhiro Ueki , Jian Zhang
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JPJP2016-178708 20160913
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G01N21/95 ; B05B12/08 ; B05C11/10 ; G03F7/16 ; G01B11/02 ; H01L21/66 ; B05B12/12 ; B05D1/00 ; B24B49/04 ; G01B11/06

Abstract:
A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.
Public/Granted literature
Information query
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