公开(公告)号：US11776824B2

公开(公告)日：2023-10-03

申请号：US16925369

申请日：2020-07-10

Applicant: Tokyo Electron Limited

Inventor： Yoshifumi Amano ,  Kazuhiro Aiura ,  Tatsuhiro Ueki

IPC: H01L21/67 ,  H01L21/306

CPC classification number: H01L21/6708 ,  H01L21/30604 ,  H01L21/67051

Abstract: A processing liquid ejection nozzle ejects a processing liquid used for a substrate processing. The processing liquid ejection nozzle includes a nozzle main body and an angle changing mechanism. The nozzle main body includes a first main body formed with a first flow path therein which communicates with a processing liquid supply path, and a second main body bent from the first main body and formed with a second flow path therein which communicates with the first flow path. The angle changing mechanism changes an angle of the nozzle main body in a horizontal direction with respect to a fixing member to which the nozzle main body is fixed.

公开(公告)号：US11244838B2

公开(公告)日：2022-02-08

申请号：US15698806

申请日：2017-09-08

Applicant: Tokyo Electron Limited

Inventor： Tatsuhiro Ueki ,  Jian Zhang

IPC: H01L21/67 ,  B05B12/08 ,  B05C11/10 ,  G01B11/02 ,  G01N21/95 ,  B05B12/12 ,  B05D1/00 ,  G03F7/16 ,  H01L21/66 ,  B24B49/04 ,  G01B11/06

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.

公开(公告)号：US10403518B2

公开(公告)日：2019-09-03

申请号：US15759932

申请日：2016-09-14

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu Nanba ,  Tatsuhiro Ueki

IPC: H01L21/67 ,  C09K13/04 ,  C03C15/00 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/306

Abstract: A plasma processing method includes etching a removing target film by supplying onto a peripheral portion of a substrate being rotated a first processing liquid containing hydrofluoric acid and nitric acid at a first mixing ratio; and etching the removing target film by, after supplying the first processing liquid onto the substrate, supplying onto the peripheral portion of the substrate being rotated a second processing liquid containing the hydrofluoric acid and the nitric acid at a second mixing ratio in which a content ratio of the hydrofluoric acid is lower and a content ratio of the nitric acid is higher than in the first processing liquid. When removing the removing target film made of SiGe, amorphous silicon or polysilicon from the peripheral portion thereof, an underlying film, for example, a film made of SiO2, which exists under the removing target film, can be appropriately left.

公开(公告)号：US20220122853A1

公开(公告)日：2022-04-21

申请号：US17646345

申请日：2021-12-29

Applicant: Tokyo Electron Limited

Inventor： Tatsuhiro Ueki ,  Jian Zhang

IPC: H01L21/67 ,  B05B12/08 ,  B05C11/10 ,  G03F7/16 ,  G01B11/02 ,  G01N21/95 ,  H01L21/66 ,  B05B12/12 ,  B05D1/00 ,  B24B49/04 ,  G01B11/06

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

公开(公告)号：US11640911B2

公开(公告)日：2023-05-02

申请号：US17646345

申请日：2021-12-29

Applicant: Tokyo Electron Limited

Inventor： Tatsuhiro Ueki ,  Jian Zhang

IPC: H01L21/67 ,  G01N21/95 ,  B05B12/08 ,  B05C11/10 ,  G03F7/16 ,  G01B11/02 ,  H01L21/66 ,  B05B12/12 ,  B05D1/00 ,  B24B49/04 ,  G01B11/06

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

公开(公告)号：US20180269076A1

公开(公告)日：2018-09-20

申请号：US15759932

申请日：2016-09-14

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu Nanba ,  Tatsuhiro Ueki

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  C03C15/00 ,  C09K13/04 ,  H01L21/02071 ,  H01L21/02087 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67051

Abstract: A plasma processing method includes etching a removing target film by supplying onto a peripheral portion of a substrate being rotated a first processing liquid containing hydrofluoric acid and nitric acid at a first mixing ratio; and etching the removing target film by, after supplying the first processing liquid onto the substrate, supplying onto the peripheral portion of the substrate being rotated a second processing liquid containing the hydrofluoric acid and the nitric acid at a second mixing ratio in which a content ratio of the hydrofluoric acid is lower and a content ratio of the nitric acid is higher than in the first processing liquid. When removing the removing target film made of SiGe, amorphous silicon or polysilicon from the peripheral portion thereof, an underlying film, for example, a film made of SiO2, which exists under the removing target film, can be appropriately left.

公开(公告)号：US20180076057A1

公开(公告)日：2018-03-15

申请号：US15698806

申请日：2017-09-08

Applicant: Tokyo Electron Limited

Inventor： Tatsuhiro Ueki ,  Jian Zhang

IPC: H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67051 ,  H01L21/67253 ,  H01L21/67288

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.