Invention Grant
- Patent Title: Light-emitting element having conductive contact layer
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Application No.: US17185551Application Date: 2021-02-25
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Publication No.: US11699776B2Publication Date: 2023-07-11
- Inventor: Schang-Jing Hon , Chao-Hsing Chen , Tsun-Kai Ko , Chien-Fu Shen , Jia-Kuen Wang , Hung-Che Chen
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW 1146339 2012.07.12
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/62 ; H01L33/54 ; H01L33/44 ; H01L33/46 ; H01L33/20 ; H01L33/24

Abstract:
A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stack, the first extension area is located outside the projected area and located between the second conductive part and the third side.
Public/Granted literature
- US20210202797A1 LIGHT-EMITTING ELEMENT Public/Granted day:2021-07-01
Information query
IPC分类: