Invention Grant
- Patent Title: Method of manufacturing magnetoresistive random access memory (MRAM) device
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Application No.: US17134460Application Date: 2020-12-27
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Publication No.: US11706993B2Publication Date: 2023-07-18
- Inventor: Hui-Lin Wang , Tai-Cheng Hou , Wei-Xin Gao , Fu-Yu Tsai , Chin-Yang Hsieh , Chen-Yi Weng , Jing-Yin Jhang , Bin-Siang Tsai , Kun-Ju Li , Chih-Yueh Li , Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Yu-Tsung Lai , Wei-Hao Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1811612412.5 2018.12.27
- The original application number of the division: US16255754 2019.01.23
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H10N50/10 ; H01L21/768 ; H01L21/762 ; H10N50/80 ; H10N35/01
Abstract:
A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.
Public/Granted literature
- US20210119115A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-04-22
Information query
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