Invention Grant
- Patent Title: Memory polling method, memory storage device and memory control circuit unit
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Application No.: US17500901Application Date: 2021-10-13
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Publication No.: US12135900B2Publication Date: 2024-11-05
- Inventor: Qi-Ao Zhu , Jing Zhang , Kuai Cao , Xin Wang , Xu Hui Cheng , Wan-Jun Hong
- Applicant: Hefei Core Storage Electronic Limited
- Applicant Address: CN Anhui
- Assignee: Hefei Core Storage Electronic Limited
- Current Assignee: Hefei Core Storage Electronic Limited
- Current Assignee Address: CN Anhui
- Agency: JCIPRNET
- Priority: CN202111146180.0 20210928
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory polling method, a memory storage device and a memory control circuit unit are provided. The memory polling method includes: detecting a plurality of busy times corresponding to a plurality of physical units when executing a plurality of first commands; counting the busy times corresponding to the physical units to generate a count statistic value, and determine a delay time based on the count statistic value; and transmitting a plurality of status requests to a rewritable non-volatile memory module after the delay time.
Public/Granted literature
- US20230098366A1 MEMORY POLLING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT Public/Granted day:2023-03-30
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