Invention Grant
- Patent Title: Non-volatile static random access memory bit cells with ferroelectric field-effect transistors
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Application No.: US18080456Application Date: 2022-12-13
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Publication No.: US12176023B2Publication Date: 2024-12-24
- Inventor: Pirooz Parvarandeh , Venkatesh P. Gopinath , Navneet Jain , Bipul C. Paul , Halid Mulaosmanovic
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Agency: Thompson Hine LLP
- Agent David Cain
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/412 ; G11C11/419 ; H01L21/28 ; H10B10/00
Abstract:
Structures for a static random access memory bit cell and methods of forming a structure for a static random access memory bit cell. The structure comprises a static random access memory bit cell including a first node and a second node, a first ferroelectric field-effect transistor including a first terminal connected to the first node, and a second ferroelectric field-effect transistor including a second terminal connected to the second node.
Public/Granted literature
- US20240194253A1 NON-VOLATILE STATIC RANDOM ACCESS MEMORY BIT CELLS WITH FERROELECTRIC FIELD-EFFECT TRANSISTORS Public/Granted day:2024-06-13
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