Invention Application
- Patent Title: Gas Field Ionization Ion Source and Ion Beam Apparatus
- Patent Title (中): 气体离子源和离子束装置
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Application No.: US14390071Application Date: 2013-03-11
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Publication No.: US20150041650A1Publication Date: 2015-02-12
- Inventor: Yoshimi Kawanami , Hironori Moritani
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Minato-ku, Tokyo
- Priority: JP2012-084425 20120403
- International Application: PCT/JP2013/056557 WO 20130311
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J37/147 ; H01J37/26 ; H01J37/10

Abstract:
In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region.
Public/Granted literature
- US09018597B2 Gas field ionization ion source and ion beam apparatus Public/Granted day:2015-04-28
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