Invention Application
- Patent Title: Charged Particle Beam Device and Analysis Method
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Application No.: US17586949Application Date: 2022-01-28
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Publication No.: US20220157558A1Publication Date: 2022-05-19
- Inventor: Kenichi Tsutsumi , Tatsuya Uchida
- Applicant: JEOL Ltd.
- Applicant Address: JP Tokyo
- Assignee: JEOL Ltd.
- Current Assignee: JEOL Ltd.
- Current Assignee Address: JP Tokyo
- Priority: JP2019-166868 20190913
- Main IPC: H01J37/244
- IPC: H01J37/244 ; H01J37/147 ; H01J37/24 ; H01J37/28

Abstract:
A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.
Public/Granted literature
- US11710615B2 Charged particle beam device and analysis method Public/Granted day:2023-07-25
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