Invention Publication
- Patent Title: TRANSITION METAL DICHALCOGENIDE COATED FLAT OPTICAL DEVICES HAVING SILICON-CONTAINING OPTICAL DEVICE STRUCTURES
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Application No.: US18275383Application Date: 2022-01-31
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Publication No.: US20240111075A1Publication Date: 2024-04-04
- Inventor: Russell Chin Yee TEO , James CONNOLLY , Chien-An CHEN , Andrew CEBALLOS , Jing JIANG , Jhenghan YANG , Yongan XU
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- International Application: PCT/US22/14593 2022.01.31
- Date entered country: 2023-08-01
- Main IPC: G02B1/00
- IPC: G02B1/00

Abstract:
Embodiments described herein relate to flat optical devices with a coating layer including monolayers selected from the group consisting of molybdenum disulfide (MoS2), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), titanium disulfide (TlS2), zirconium disulfide (ZrS2), zirconium diselenide (ZrSe2), hafnium disulfide (HfS2), platinum disulfide (PtS2), tin disulfide (SnS2), or combinations thereof. The coating layer is disposed over a plurality of optical device structures of the optical device. The monolayers may alternate between the materials to form the coating layer or may be a uniform coating layer of a single material. The coating layer is disposed over each optical device structure of the plurality of optical device structures.
Information query
IPC分类:
G | 物理 |
G02 | 光学 |
G02B | 光学元件、系统或仪器 |
G02B1/00 | 按制造材料区分的光学元件;用于光学元件的光学涂层 |