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公开(公告)号：US20250102398A1
公开(公告)日：2025-03-27
申请号：US18828801
申请日：2024-09-09
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Chan Juan XING , Jinxin FU , Ludovic GODET
IPC: G01M11/00
Abstract: A method and apparatus for determining a line angle and a line angle rotation of a grating or line feature is disclosed. An aspect of the present disclosure involves, measuring coordinate points of a first line feature using a measurement tool, determining a first slope of the first line feature from the coordinate points, and determining a first line angle from the slope of the first line feature. This process can be repeated to find a second slope of a second line feature that is adjacent to the first line feature. The slope of the first and second line features can be compared to find a line angle rotation. The line angle rotation is compared to a design specification and a stitch quality is determined.
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2.发明公开公开(公告)号：US20240111075A1
公开(公告)日：2024-04-04
申请号：US18275383
申请日：2022-01-31
Applicant: Applied Materials, Inc.
Inventor： Russell Chin Yee TEO , James CONNOLLY , Chien-An CHEN , Andrew CEBALLOS , Jing JIANG , Jhenghan YANG , Yongan XU
IPC: G02B1/00
CPC classification number: G02B1/002
Abstract: Embodiments described herein relate to flat optical devices with a coating layer including monolayers selected from the group consisting of molybdenum disulfide (MoS2), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), titanium disulfide (TlS2), zirconium disulfide (ZrS2), zirconium diselenide (ZrSe2), hafnium disulfide (HfS2), platinum disulfide (PtS2), tin disulfide (SnS2), or combinations thereof. The coating layer is disposed over a plurality of optical device structures of the optical device. The monolayers may alternate between the materials to form the coating layer or may be a uniform coating layer of a single material. The coating layer is disposed over each optical device structure of the plurality of optical device structures.
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公开(公告)号：US20230408913A1
公开(公告)日：2023-12-21
申请号：US18241705
申请日：2023-09-01
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Jinxin FU , Jhenghan YANG , Ludovic GODET
CPC classification number: G03F7/0007 , G02B6/136 , G02B6/122
Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.
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公开(公告)号：US20220357656A1
公开(公告)日：2022-11-10
申请号：US17740116
申请日：2022-05-09
Applicant: Applied Materials, Inc.
Inventor： Hao TANG , Kang LUO , Erica CHEN , Yongan XU
Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.
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公开(公告)号：US20220308460A1
公开(公告)日：2022-09-29
申请号：US17701394
申请日：2022-03-22
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Naamah ARGAMAN , David SELL , Ludovic GODET
Abstract: Methods of fabricating large-scale optical devices having sub-micron dimensions are provided. A method is provided that includes projecting a beam to a mask, the mask corresponding to a section of an optical device pattern, the optical device pattern divided into four or more equal portions, each portion corresponding to a section of a substrate. The method further includes scanning the mask over a first section of the substrate to pattern a first portion of the optical device pattern, the substrate is positioned at a first rotation angle relative to the mask. The method further includes rotating the substrate to a second rotation angle, the second rotation angle corresponding to 360° divided by a total number of portions of the optical device pattern, scanning the mask over a second section of the substrate from the initial position to the final position to pattern a second portion of the optical device pattern.
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Patent Agency Ranking
公开(公告)号：US20200332414A1
公开(公告)日：2020-10-22
申请号：US16795232
申请日：2020-02-19
Applicant: Applied Materials, Inc.
Inventor： Jinrui GUO , Ludovic GODET , Rutger MEYER TIMMERMAN THIJSSEN , Yongan XU , Jhenghan YANG , Chien-An CHEN
Abstract: Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.
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公开(公告)号：US20230408928A1
公开(公告)日：2023-12-21
申请号：US18332027
申请日：2023-06-09
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Jin XU , Ludovic GODET
CPC classification number: G03F7/70475 , G03F7/70633 , G03F9/7046 , G03F7/70683 , G03F9/7088
Abstract: A system, software application, and method for optical device metrology of optical device patterns formed from lithography stitching are provided. In one example, the method includes creating a stitched design file comprising images of a plurality of masks; defining target coordinates for each of the plurality of masks in the stitched design file; defining an alignment mark for the stitched design file; capturing images of an optical device pattern at each of the target coordinates; comparing the captured images of the optical device pattern at each of the target coordinates to virtual images of the stitched design file at each of the target coordinates; and determining whether the optical device pattern at each of the target coordinates meets a threshold value.
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公开(公告)号：US20230324805A1
公开(公告)日：2023-10-12
申请号：US18131737
申请日：2023-04-06
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , William WILKINSON , Jing GUO
CPC classification number: G03F7/203 , G03F7/70475
Abstract: A method of forming patterned features on a substrate is provided. The method includes: positioning a first mask over a first portion of a substrate; directing radiation through the patterned area of the first mask at the first portion of the substrate to form a first patterned region on the substrate; positioning a second mask over a second portion of the substrate, the second mask including a first patterned area and a second patterned area, the first patterned area spaced apart from the second patterned area by an unpatterned area; directing radiation through the first patterned area of the second mask at a first part of the second portion of the substrate to form a second patterned region on the substrate; and directing radiation through the second patterned area of the second mask at a second part of the second portion of the substrate to form a third patterned region.
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公开(公告)号：US20230253206A1
公开(公告)日：2023-08-10
申请号：US17989557
申请日：2022-11-17
Applicant: Applied Materials, Inc.
Inventor： Yongan XU , Wei WU , Ludovic GODET
IPC: H01L21/033
CPC classification number: H01L21/0338 , H01L21/0335 , H01L21/0337
Abstract: Embodiments of the present disclosure generally relate to methods for forming features having small and large line widths on the same substrate or device. In some embodiments, the methods described and discussed herein can be used to produce optical and photonic devices. These devices, including augmented reality (AR) devices and/or virtual reality (VR) devices, have desired pattern areas with different features and/or line widths to achieve the desired optical performance.
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公开(公告)号：US20230151479A1
公开(公告)日：2023-05-18
申请号：US18094265
申请日：2023-01-06
Applicant: Applied Materials, Inc.
Inventor： Jinrui GUO , Ludovic GODET , Rutger MEYER TIMMERMAN THIJSSEN , Yongan XU , Jhenghan YANG , Chien-An CHEN
CPC classification number: C23C16/042 , C23C16/56 , C23C16/308
Abstract: Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.
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