公开(公告)号：US20240001398A1

公开(公告)日：2024-01-04

申请号：US18337246

申请日：2023-06-19

Applicant: Applied Materials, Inc.

Inventor： Russell Chin Yee TEO ,  Yingdong LUO ,  Ludovic GODET ,  Daihua ZHANG ,  Zhengping YAO ,  James D. STRASSNER

IPC: B05C5/02 ,  B05D3/00 ,  B05D3/06 ,  B05D7/24

CPC classification number: B05C5/0291 ,  B05D3/007 ,  B05D3/067 ,  B05D7/24 ,  B05D2203/30

Abstract: A method of forming a substrate carrier is provided. The method includes forming a first electrode over a first surface of a substrate, the first electrode arranged in a first pattern including a plurality of segments, wherein portions of the plurality of segments are spaced apart from each other by a plurality of gaps; and dispensing a plurality of droplets of a dielectric material over the substrate and into the plurality of gaps. The plurality of droplets includes a first droplet and a second droplet, the first droplet is dispensed onto a first location over the substrate, the second droplet is dispensed onto a second location over the substrate, a size of the first droplet is at least 10% larger than a size of the second droplet.

公开(公告)号：US20240111075A1

公开(公告)日：2024-04-04

申请号：US18275383

申请日：2022-01-31

Applicant: Applied Materials, Inc.

Inventor： Russell Chin Yee TEO ,  James CONNOLLY ,  Chien-An CHEN ,  Andrew CEBALLOS ,  Jing JIANG ,  Jhenghan YANG ,  Yongan XU

IPC: G02B1/00

CPC classification number: G02B1/002

Abstract: Embodiments described herein relate to flat optical devices with a coating layer including monolayers selected from the group consisting of molybdenum disulfide (MoS2), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), titanium disulfide (TlS2), zirconium disulfide (ZrS2), zirconium diselenide (ZrSe2), hafnium disulfide (HfS2), platinum disulfide (PtS2), tin disulfide (SnS2), or combinations thereof. The coating layer is disposed over a plurality of optical device structures of the optical device. The monolayers may alternate between the materials to form the coating layer or may be a uniform coating layer of a single material. The coating layer is disposed over each optical device structure of the plurality of optical device structures.

公开(公告)号：US20220011471A1

公开(公告)日：2022-01-13

申请号：US17354667

申请日：2021-06-22

Applicant: Applied Materials, Inc.

Inventor： Sage Toko Garrett DOSHAY ,  Kenichi OHNO ,  Rutger MEYER TIMMERMAN THIJSSEN ,  Russell Chin Yee TEO ,  Jinrui GUO

IPC: G02B3/08 ,  C03C15/00

Abstract: Embodiments described herein relate to encapsulated optical devices and methods of forming optical devices with controllable air-gapped encapsulation. In one embodiment, a plurality of openings are formed in a support layer surrounding the plurality of optical device structures to create a high refractive index contrast between the optical device structures, the support layer, and the openings. In another embodiment, sacrificial material is disposed in-between the optical device structures and then an encapsulation layer is disposed on the optical device structures. The sacrificial material is removed, forming a space bounded by the encapsulation layer, the substrate, and each of the optical device structures. In yet another embodiment, the encapsulation layer is disposed over the optical device structures forming a space bounded by the encapsulation layer, the substrate, and each of the optical device structures.

公开(公告)号：US20220262801A1

公开(公告)日：2022-08-18

申请号：US17592397

申请日：2022-02-03

Applicant: Applied Materials, Inc.

Inventor： Russell Chin Yee TEO

IPC: H01L27/108 ,  H01L49/02 ,  H01G4/10 ,  G06N10/00

Abstract: Embodiments of the present disclosure generally relate to methods of forming a capacitor for DRAM. The method begins by preparing a substrate for forming the capacitor. A bottom electrode is formed on the top surface of the substrate. A dielectric layer is formed in contact with the bottom electrode. The material of the dielectric layer is one of a barium titanate, BaTiO3 (BTO) strontium titanate, SrTiO3 (STO), barium strontium titanate, BaSrTiO3 (BSTO), ZrSTO, ZrBTO, or ZrBSTO. A top electrode is formed on the dielectric layer and then a cap is formed on the top electrode.

公开(公告)号：US20210405399A1

公开(公告)日：2021-12-30

申请号：US17306853

申请日：2021-05-03

Applicant: Applied Materials, Inc.

Inventor： Russell Chin Yee TEO ,  Ludovic GODET ,  Nir YAHAV ,  Robert Jan VISSER

IPC: G02F1/035

Abstract: An electro-optical waveguide modulator device includes a seed layer on a substrate, the seed layer having a first crystallographic plane aligned with a surface of the seed layer, an electro-optical channel extending in a first direction on the seed layer and having a second crystallographic plane aligned with the surface of the seed layer, an insulator layer on both sides of the electro-optical channel on the substrate in a second direction perpendicular to the first direction, an electrode barrier layer on the electro-optical channel and the insulator layer, and one or more of electrodes extending in the second direction. The seed layer and the insulator layer each comprise material having a refractive index that is lower than the electro-optical channel.