Invention Grant
- Patent Title: Semiconductor device manufacturing method
- Patent Title (中): 半导体器件制造方法
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Application No.: US12155773Application Date: 2008-06-10
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Publication No.: US08367560B2Publication Date: 2013-02-05
- Inventor: Arito Ogawa , Kunihiko Iwamoto , Hiroyuki Ota
- Applicant: Arito Ogawa , Kunihiko Iwamoto , Hiroyuki Ota
- Applicant Address: JP Tokyo JP Kyoto-shi
- Assignee: Hitachi Kokusai Electric Inc.,Rohm Co., Ltd.
- Current Assignee: Hitachi Kokusai Electric Inc.,Rohm Co., Ltd.
- Current Assignee Address: JP Tokyo JP Kyoto-shi
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2007-159176 20070615; JP2008-137831 20080527
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; B05C11/00 ; B05C13/00 ; B05C13/02
Abstract:
A semiconductor device manufacturing method includes the steps of forming a silicate film by performing a first step of forming a metal oxide film on a silicon substrate, and a second step of inducing a solid phase reaction between the metal oxide film and a surface of the silicon substrate by heat treatment, and forming a high dielectric constant insulating film on the silicate film.
Public/Granted literature
- US20080318442A1 Semiconductor device manufacturing method and substrate processing apparatus Public/Granted day:2008-12-25
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