Invention Grant
- Patent Title: Single-band and dual-band infrared detectors
- Patent Title (中): 单频和双频红外探测器
-
Application No.: US13712122Application Date: 2012-12-12
-
Publication No.: US08928029B2Publication Date: 2015-01-06
- Inventor: David Z. Ting , Sarath D. Gunapala , Alexander Soibel , Jean Nguyen , Arezou Khoshakhlagh
- Applicant: California Institute of Technology
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: KPPB LLP
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L31/02 ; H01L31/109
Abstract:
Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.
Public/Granted literature
- US20130146998A1 SINGLE-BAND AND DUAL-BAND INFRARED DETECTORS Public/Granted day:2013-06-13
Information query
IPC分类:
