Invention Grant
- Patent Title: Ion beam apparatus
- Patent Title (中): 离子束装置
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Application No.: US13845582Application Date: 2013-03-18
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Publication No.: US09111717B2Publication Date: 2015-08-18
- Inventor: Tatsuya Asahata , Yasuhiko Sugiyama , Hiroshi Oba
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2012-068016 20120323
- Main IPC: H01J37/10
- IPC: H01J37/10 ; H01J37/302 ; H01J37/305

Abstract:
An ion beam apparatus includes an ion source configured to emit an ion beam, a condenser lens electrode that condenses the ion beam, and a condenser lens power source configured to apply a voltage to the condenser lens electrode. A storage portion stores a first voltage value, a second voltage value, a third voltage value, and a fourth voltage value. A control portion retrieves the third voltage value from the storage portion and sets the retrieved third voltage value to the condenser lens power source when an observation mode is switched to a wide-range observation mode, and retrieves the fourth voltage value from the storage portion and sets the retrieved fourth voltage value to the condenser lens power source when a processing mode is switched to the wide-range observation mode.
Public/Granted literature
- US20130248732A1 ION BEAM APPARATUS Public/Granted day:2013-09-26
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