Invention Grant
- Patent Title: Charged particle beam device
- Patent Title (中): 带电粒子束装置
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Application No.: US14382165Application Date: 2013-02-20
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Publication No.: US09330883B2Publication Date: 2016-05-03
- Inventor: Terutaka Nanri , Satoshi Tomimatsu , Isamu Sekihara
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2012-045128 20120301
- International Application: PCT/JP2013/054217 WO 20130220
- International Announcement: WO2013/129209 WO 20130906
- Main IPC: H01J37/00
- IPC: H01J37/00 ; H01J37/244 ; H01J37/28 ; H01J37/317 ; H01J37/305

Abstract:
Provided is a charged particle beam device with high sensitivity, capable of detecting charged particles emitted from a sample at high resolution. An absorption current detector arranged to contact with the sample makes an absorption current generated in the sample by an irradiated charged particle beam flow through the detector, thereby to detect the current. The charged particle beam scans the sample and the charged particle beam device acquires an absorption current image. In case the absorption current detector is arranged separated from the sample, the absorption current detector detects the incident charged particle beam as a signal current dependent on an angle θ formed in a direction from the irradiation position on the sample toward the absorption current detector relative to at least one of the normal line direction of the front surface of the sample and the incident direction of the charged particle beam.
Public/Granted literature
- US20150014529A1 CHARGED PARTICLE BEAM DEVICE Public/Granted day:2015-01-15
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