Invention Grant
- Patent Title: Focused ion beam apparatus with precious metal emitter surface
- Patent Title (中): 聚焦离子束设备,具有贵金属发射体表面
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Application No.: US14591843Application Date: 2015-01-07
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Publication No.: US09336979B2Publication Date: 2016-05-10
- Inventor: Anto Yasaka , Fumio Aramaki , Yasuhiko Sugiyama , Tomokazu Kozakai , Osamu Matsuda
- Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
- Applicant Address: JP
- Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2011-230769 20111020
- Main IPC: H01J27/02
- IPC: H01J27/02 ; H01J37/08 ; H01J37/305 ; H01J27/26

Abstract:
A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.
Public/Granted literature
- US20150162160A1 FOCUSED ION BEAM APPARATUS Public/Granted day:2015-06-11
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