A memory programming method for a rewritable non-volatile memory module having memory cells is provided. The memory programming method includes: performing a first programming process on the memory cells according to write data and obtaining a first programming result of the first programming process; grouping the memory cells into programming groups according to the first programming result; and performing a second programming process on the memory cells according to the write data. The second programming process includes: programming a first programming group among the programming groups by using a first program voltage; and programming a second programming group among the programming groups by using a second program voltage. The first program voltage and the second program voltage are different. Moreover, a memory control circuit unit and a memory storage device are provided.