Invention Grant
US09548187B2 Microwave radiation antenna, microwave plasma source and plasma processing apparatus
有权
微波辐射天线,微波等离子体源和等离子体处理装置
- Patent Title: Microwave radiation antenna, microwave plasma source and plasma processing apparatus
- Patent Title (中): 微波辐射天线,微波等离子体源和等离子体处理装置
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Application No.: US14095563Application Date: 2013-12-03
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Publication No.: US09548187B2Publication Date: 2017-01-17
- Inventor: Taro Ikeda , Tomohito Komatsu , Shigeru Kasai , Hiroyuki Miyashita , Yuki Osada , Akira Tanihara , Yutaka Fujino
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2012-269227 20121210
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.
Public/Granted literature
- US20140158302A1 MICROWAVE RADIATION ANTENNA, MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS Public/Granted day:2014-06-12
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