Plasma probe device and plasma processing apparatus

    公开(公告)号:US11164730B2

    公开(公告)日:2021-11-02

    申请号:US16122226

    申请日:2018-09-05

    Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

    Plasma Processing Apparatus and Plasma Control Method

    公开(公告)号:US20240339304A1

    公开(公告)日:2024-10-10

    申请号:US18617334

    申请日:2024-03-26

    CPC classification number: H01J37/32669 H01J37/32165

    Abstract: There is a plasma processing apparatus comprising: a processing chamber having a processing space; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation; a dielectric having a first surface; an electromagnetic wave supply part configured to supply the electromagnetic waves to the processing space via the dielectric; and a resonator array structure disposed along the first surface of the dielectric, wherein the resonator array structure includes a plurality of resonators, each resonator having a structure in which a conductive member is laminated on one surface of a dielectric plate, having a first resonance frequency, capable of resonating with magnetic field components of the electromagnetic waves and having a size smaller than a wavelength of the electromagnetic waves, and the resonator array structure is configured to form cells surrounded by the resonators, and the cells include the resonators having different first resonance frequencies between the cells.

    Electric field sensor, surface wave plasma source, and surface wave plasma processing apparatus

    公开(公告)号:US11244810B2

    公开(公告)日:2022-02-08

    申请号:US16872778

    申请日:2020-05-12

    Abstract: An electric field sensor includes a probe, a cylindrical probe guide, an insulating member, a preload spring and a connector. The probe serves as an inner conductor of a coaxial transmission path and has a portion forming a monopole antenna at a tip end to be in constant contact with a microwave transmission window by a pressing force of a built-in spring thereof. The probe guide is disposed at an outer side of the probe and serves as an outer conductor of the coaxial transmission path. The insulating member is disposed between the probe and the probe guide. The preload spring preloads the probe guide downward and presses the probe guide so that the tip end of the probe guide comes in constant contact with the planar slot antenna. The connector is connected to the probe and the probe guide to connect coaxial signal cables for extracting signals.

    PLASMA PROCESSING APPARATUS AND CONTROL METHOD

    公开(公告)号:US20220005739A1

    公开(公告)日:2022-01-06

    申请号:US17475736

    申请日:2021-09-15

    Abstract: A method of controlling plasma includes providing a plasma processing apparatus that includes N microwave introducing radiators disposed in a circumferential direction of a ceiling plate of a processing container so as to introduce microwaves for generating plasma into the processing container, wherein N≥2; and M sensors and configured to monitor at least one of electron density Ne and electron temperature Te of the plasma generated in the processing container, wherein M equals to N or a multiple of N. The method further includes controlling at least one of a power and a phase of the microwaves introduced from the microwave introducing radiators based on at least one of electron density Ne and electron temperature Te of the plasma monitored by the M sensors.

    Plasma processing apparatus and control method

    公开(公告)号:US11152269B2

    公开(公告)日:2021-10-19

    申请号:US15947960

    申请日:2018-04-09

    Abstract: Provided is a plasma processing apparatus including: a plurality of gas supply nozzles which are provided on a wall surface of a processing container and supply process gas toward the inside of the processing container in a radial direction; N microwave introducing modules of which the number disposed in a circumferential direction of a ceiling plate of the processing container so as to introduce microwaves for generating plasma into the processing container, in which N≥2; and M sensors provided on the wall surface of the processing container so as to monitor at least any one of electron density Ne and electron temperature Te of the plasma generated in the processing container, in which M equals to N or a multiple of N.

    Plasma processing apparatus and control method

    公开(公告)号:US10971413B2

    公开(公告)日:2021-04-06

    申请号:US15947994

    申请日:2018-04-09

    Abstract: Provided is a plasma processing apparatus including a microwave radiating mechanism configured to radiate microwaves output from a microwave output unit into a processing container. The microwave radiating mechanism includes: an antenna configured to radiate the microwaves; a dielectric member configured to transmit the microwaves radiated from the antenna, and form an electric field for generating surface wave plasma by the microwaves; a sensor provided in the microwave radiating mechanism or adjacent to the microwave radiating mechanism, and configured to monitor electron temperature of the generated plasma; and a controller configured to determine a plasma ignition state based on the electron temperature of the plasma monitored by the sensor.

    MICROWAVE IRRADIATION APPARATUS
    10.
    发明申请
    MICROWAVE IRRADIATION APPARATUS 审中-公开
    微波辐射装置

    公开(公告)号:US20140034636A1

    公开(公告)日:2014-02-06

    申请号:US13948436

    申请日:2013-07-23

    CPC classification number: H05B6/6402 H05B6/6491 H05B6/806

    Abstract: A microwave irradiation apparatus, for performing a predetermined process by irradiating a microwave to a target substrate, includes a processing chamber configured to accommodate the target substrate, a support member configured to support the target substrate in the processing chamber, and a microwave introduction mechanism configured to generate microwaves and introduce the microwaves into the processing chamber. The microwave irradiation apparatus further includes microwave introduction ports through which the microwave generated by the microwave introducing mechanism is introduced into the processing chamber, electric field sensors configured to measure an electric field formed by the microwave introduced into the processing chamber, and a control unit configured to control powers of the microwaves introduced into the processing chamber through the microwave introduction ports from the microwave introduction mechanism based on the electric field measured by the electric field sensors.

    Abstract translation: 一种用于通过向目标基板照射微波来执行预定处理的微波照射装置包括:被配置为容纳目标基板的处理室,被配置为在处理室中支撑目标基板的支撑部件和配置在所述处理室中的微波引入机构 产生微波并将微波引入处理室。 微波辐射装置还包括微波引入端口,微波引入机构产生的微波通过该微波引入端口被引入到处理室中,电场传感器被配置为测量由引入到处理室中的微波形成的电场;以及控制单元, 基于由电场传感器测量的电场,通过微波引入口从微波引入机构控制引入处理室的微波的功率。

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