Invention Grant
- Patent Title: Light emitting diode structure
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Application No.: US14825899Application Date: 2015-08-13
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Publication No.: US09640731B2Publication Date: 2017-05-02
- Inventor: Chen Ou , Chun-Hsiang Tu , De-Shan Kuo , Chun-Teng Ko , Po-Shun Chiu , Chia-Liang Hsu
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101109277A 20120316; TW101136456A 20121001
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/00 ; H01L33/20 ; H01L33/38 ; H01L33/40 ; H01L33/42

Abstract:
A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.
Public/Granted literature
- US20150349210A1 HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND THE MANUFACTURING METHOD THEREOF Public/Granted day:2015-12-03
Information query
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