Invention Grant
- Patent Title: Substrate etching apparatus and substrate analysis method
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Application No.: US14766981Application Date: 2014-01-21
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Publication No.: US09741627B2Publication Date: 2017-08-22
- Inventor: Katsuhiko Kawabata , Takuma Hayashi , Mitsumasa Ikeuchi , Sungjae Lee , Jin Kunika
- Applicant: IAS Inc.
- Applicant Address: JP Tokyo
- Assignee: IAS, INC
- Current Assignee: IAS, INC
- Current Assignee Address: JP Tokyo
- Agency: Roberts & Roberts, LLP
- Priority: JPP2013-032433 20130221
- International Application: PCT/JP2014/051032 WO 20140121
- International Announcement: WO2014/129246 WO 20140828
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; H01L21/66 ; H01L21/67 ; H01J37/32 ; H01L21/3065 ; G01N1/32
Abstract:
The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.
Public/Granted literature
- US20150357249A1 SUBSTRATE ETCHING APPARATUS AND SUBSTRATE ANALYSIS METHOD Public/Granted day:2015-12-10
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