-
1.发明申请公开(公告)号：US20210148858A1
公开(公告)日：2021-05-20
申请号：US17043406
申请日：2019-08-29
Applicant: IAS INC.
Inventor： Katsuhiko KKAWABATA , Tatsuya ICHINOSE , Kohei NiISHIGUCHI
IPC: G01N27/623 , G01N27/626 , H01J49/00 , H01J49/04 , H01J49/10
Abstract: The present invention provides a method for analyzing a sample containing metal fine particles with an inductive coupling plasma mass spectrometer. The method enables analysis of the sample without the need of standard metal fine particles. Specifically, the present invention relates to a method for analyzing metal fine particles in liquid by use of an inductive coupling plasma mass spectrometer. In the method, the analysis apparatus is provided with a standard solution introduction apparatus including a standard solution storage unit for storing a standard solution containing a specific element in a known concentration, a syringe pump for suctioning and discharging the standard solution, and a solution introduction unit having a standard solution nebulizer and a standard solution spray chamber that are supplied with the standard solution, the standard solution is directly supplied to the standard solution nebulizer at a flow rate of 3 μL/min or less.
-
公开(公告)号：US09741627B2
公开(公告)日：2017-08-22
申请号：US14766981
申请日：2014-01-21
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Takuma Hayashi , Mitsumasa Ikeuchi , Sungjae Lee , Jin Kunika
IPC: C23F1/00 , H01L21/306 , H01L21/66 , H01L21/67 , H01J37/32 , H01L21/3065 , G01N1/32
CPC classification number: H01L22/12 , G01N1/32 , H01J37/32449 , H01J37/32834 , H01J2237/334 , H01L21/3065 , H01L21/67069
Abstract: The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.
-
公开(公告)号：US20150357249A1
公开(公告)日：2015-12-10
申请号：US14766981
申请日：2014-01-21
Applicant: IAS INC.
Inventor： Katsuhiko Kawabata , Takuma Hayashi , Mitsumasa Ikeuchi , Sungjae Lee , Jin Kunika
IPC: H01L21/66 , H01L21/67 , H01L21/3065
CPC classification number: H01L22/12 , G01N1/32 , H01J37/32449 , H01J37/32834 , H01J2237/334 , H01L21/3065 , H01L21/67069
Abstract: The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.
Abstract translation: 本发明提供一种蚀刻装置，适用于蚀刻构成基板的基板或体硅上的多晶硅。 本发明涉及一种蚀刻装置，其包括气体流动调节装置，其允许蚀刻气体从基板的周边流动到基板的大致中心，并且涉及能够以均匀的方式蚀刻多晶硅或体硅的技术 在整个基板表面上的厚度。 此外，气体流量调节装置以可垂直移动的方式安装，并且可以通过气流调节装置的调节来控制蚀刻速度。
-
公开(公告)号：US10151727B2
公开(公告)日：2018-12-11
申请号：US15322389
申请日：2015-07-21
Applicant: IAS Inc. , Shin-Etsu Handotai Co., Ltd.
Inventor： Katsuhiko Kawabata , Tatsuya Ichinose , Toshihiko Imai
Abstract: An object of the present invention is to provide an analysis apparatus in which local analysis of a substrate with ICP-MS is automated. The present invention relates to an automatic analysis apparatus for a local region of a substrate, including: a nozzle for local analysis having: analysis-liquid supply means that ejects analysis liquid onto a substrate; analysis-liquid discharge means that takes the analysis liquid including an object to be analyzed from the substrate into the nozzle to feed the analysis liquid to a nebulizer; and exhaust means including an exhaust channel in the nozzle; automatic liquid-feed means that automatically feeds the collected analysis liquid to ICP-MS; flow adjustment means that adjusts the flow of the analysis liquid; and automatic control means that simultaneously performs local analysis and analysis of the object to be analyzed with the ICP-MS to perform automatic analysis to a plurality of adjacent predetermined regions, successively.
-
公开(公告)号：US10024801B2
公开(公告)日：2018-07-17
申请号：US15540320
申请日：2016-08-16
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Tatsuya Ichinose , Mitsumasa Ikeuchi
Abstract: The present invention relates to an analysis system capable of online transferring an analysis sample and promptly acquiring an analysis result. The analysis system capable of analyzing the analysis samples supplied from at least two sites, with one analysis apparatus, and requiring no cleaning process for a nebulizer and a spray chamber, is provided. The present invention relates to analysis system including at least two sample individually transferring units. Each sample transferring path of the sample individually transferring units is coupled to a plasma torch of a common analysis unit including the one analysis apparatus with inductively-coupled plasma or microwave plasma. Each sample transferring path has a main flow path, a makeup gas supply path, and a drain flow path. The plasma torch has a sample introducing pipe that introduces the atomized analysis sample, provided at a substantially center. The inner diameter of the drain flow path is equivalent to or larger than the inner diameter of an inlet portion of the sample introducing pipe of the plasma torch.
-
Patent Agency Ranking
公开(公告)号：US11837510B2
公开(公告)日：2023-12-05
申请号：US17043964
申请日：2019-04-08
Applicant: Kioxia Corporation , IAS Inc.
Inventor： Jiahong Wu , Katsuhiko Kawabata , Mitsumasa Ikeuchi , Sungjae Lee
IPC: H01L21/66 , C30B29/06 , C30B33/08 , G01N27/62 , G01N1/32 , G01N27/623 , H01L21/02 , H01L21/3213
CPC classification number: H01L22/10 , C30B29/06 , C30B33/08 , G01N27/62 , H01L21/0262 , H01L21/32134
Abstract: The present invention provides a method for analyzing a silicon substrate, by which impurities such as a very small amount of metal in a silicon substrate provided with a thick nitride film can be analyzed with high accuracy with ICP-MS, and is characterized by use of a silicon substrate analysis apparatus including an analysis scan port having a load port, a substrate conveyance robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis stage and a nozzle for analysis of a substrate; an analysis liquid collection unit; and an analyzer for performing inductive coupling plasma analysis.
-
公开(公告)号：US11422071B2
公开(公告)日：2022-08-23
申请号：US17415191
申请日：2019-11-06
Applicant: IAS, INC.
Inventor： Katsuhiko Kawabata , Sungjae Lee , Takuma Hayashi
Abstract: A substrate analysis method using a nozzle for substrate analysis which discharges an analysis liquid from a tip thereof, scans a substrate surface with a discharged analysis liquid, and sucks the analysis liquid. This is done by arranging a liquid catch plate that catches the discharged analysis liquid, thus retaining analysis liquid discharged between the nozzle tip and the liquid catch plate; positioning the substrate so that the end part thereof can be inserted between the nozzle tip and the liquid catch plate; bringing the end part of the substrate into contact with analysis liquid retained between the nozzle tip and liquid catch plate; and moving the nozzle and liquid catch plate concurrently along a periphery of the substrate, while keeping the end part of the substrate in contact with the analysis liquid, to analyze the end part of the substrate.
-
公开(公告)号：US10688485B2
公开(公告)日：2020-06-23
申请号：US15780925
申请日：2017-07-18
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Sungjae Lee
Abstract: The present invention provides a substrate analysis nozzle that reliably prevents a leakage (release) of analysis solution from the nozzle even in the case of a highly hydrophilic substrate and that collects the analysis solution with a high collection ratio after scanning. The present invention is directed to a substrate analysis nozzle configured to discharge an analysis solution from a tip of the substrate analysis nozzle onto a substrate, configured to scan a surface of the substrate using the discharged analysis solution, and configured to suck the analysis solution. The substrate analysis nozzle has a triple-tube structure made up of: a pipe through which the analysis solution is discharged and sucked; a first outer tube surrounding the pipe and surrounding the analysis solution used for scanning; and a second outer tube surrounding the first outer tube. The substrate analysis nozzle includes: first exhausting means including an exhaust path defined between the pipe and the first outer tube; and second exhausting means including an exhaust path defined between the first outer tube and the second outer tube.
-
公开(公告)号：US20190358622A1
公开(公告)日：2019-11-28
申请号：US15780925
申请日：2017-07-18
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Sungjae Lee
Abstract: The present invention provides a substrate analysis nozzle that reliably prevents a leakage (release) of analysis solution from the nozzle even in the case of a highly hydrophilic substrate and that collects the analysis solution with a high collection ratio after scanning. The present invention is directed to a substrate analysis nozzle configured to discharge an analysis solution from a tip of the substrate analysis nozzle onto a substrate, configured to scan a surface of the substrate using the discharged analysis solution, and configured to suck the analysis solution. The substrate analysis nozzle has a triple-tube structure made up of: a pipe through which the analysis solution is discharged and sucked; a first outer tube surrounding the pipe and surrounding the analysis solution used for scanning; and a second outer tube surrounding the first outer tube. The substrate analysis nozzle includes: first exhausting means including an exhaust path defined between the pipe and the first outer tube; and second exhausting means including an exhaust path defined between the first outer tube and the second outer tube.
-
公开(公告)号：US20180217036A1
公开(公告)日：2018-08-02
申请号：US15747517
申请日：2016-08-16
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Tatsuya Ichinose , Hayashi Takuma
CPC classification number: G01N1/4044 , G01N1/28 , G01N1/32 , G01N27/62 , H01L21/67017 , H01L21/67034 , H01L21/67069 , H01L21/67253 , H01L21/6773 , H01L21/67742 , H01L21/68
Abstract: A silicon substrate analyzing device with which impurities such as trace metals in a silicon substrate having a thick nitride film or oxide film formed on a silicon substrate surface can be analyzed with a high precision by ICP-MS. The silicon substrate analyzing device includes a load port, a substrate transportation robot, an aligner, a drying chamber, a gas-phase decomposition chamber, an analysis scan port having an analysis stage and a substrate analyzing nozzle, an analysis liquid collecting means, and an analysis means for performing inductively coupled plasma mass spectrometry. The silicon substrate having an oxide film or a nitride film formed on the silicon substrate is subjected to scanning the surface of the silicon substrate with a high-concentration recovered liquid with use of the substrate analyzing nozzle so that the high-concentration recovered liquid is recovered. The recovered high-concentration recovered liquid is discharged onto the surface of the silicon substrate and then heated and dried. The surface of the silicon substrate is scanned with the analysis liquid so that the impurities are recovered, and the analysis liquid is analyzed by ICP-MS.
-
-
-
-
-
-
-
-
-
Search Results
16
records
(took 0.024 seconds)
