-
公开(公告)号：US10024801B2
公开(公告)日：2018-07-17
申请号：US15540320
申请日：2016-08-16
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Tatsuya Ichinose , Mitsumasa Ikeuchi
Abstract: The present invention relates to an analysis system capable of online transferring an analysis sample and promptly acquiring an analysis result. The analysis system capable of analyzing the analysis samples supplied from at least two sites, with one analysis apparatus, and requiring no cleaning process for a nebulizer and a spray chamber, is provided. The present invention relates to analysis system including at least two sample individually transferring units. Each sample transferring path of the sample individually transferring units is coupled to a plasma torch of a common analysis unit including the one analysis apparatus with inductively-coupled plasma or microwave plasma. Each sample transferring path has a main flow path, a makeup gas supply path, and a drain flow path. The plasma torch has a sample introducing pipe that introduces the atomized analysis sample, provided at a substantially center. The inner diameter of the drain flow path is equivalent to or larger than the inner diameter of an inlet portion of the sample introducing pipe of the plasma torch.
-
Patent Agency Ranking
公开(公告)号：US11837510B2
公开(公告)日：2023-12-05
申请号：US17043964
申请日：2019-04-08
Applicant: Kioxia Corporation , IAS Inc.
Inventor： Jiahong Wu , Katsuhiko Kawabata , Mitsumasa Ikeuchi , Sungjae Lee
IPC: H01L21/66 , C30B29/06 , C30B33/08 , G01N27/62 , G01N1/32 , G01N27/623 , H01L21/02 , H01L21/3213
CPC classification number: H01L22/10 , C30B29/06 , C30B33/08 , G01N27/62 , H01L21/0262 , H01L21/32134
Abstract: The present invention provides a method for analyzing a silicon substrate, by which impurities such as a very small amount of metal in a silicon substrate provided with a thick nitride film can be analyzed with high accuracy with ICP-MS, and is characterized by use of a silicon substrate analysis apparatus including an analysis scan port having a load port, a substrate conveyance robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis stage and a nozzle for analysis of a substrate; an analysis liquid collection unit; and an analyzer for performing inductive coupling plasma analysis.
-
公开(公告)号：US09741627B2
公开(公告)日：2017-08-22
申请号：US14766981
申请日：2014-01-21
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Takuma Hayashi , Mitsumasa Ikeuchi , Sungjae Lee , Jin Kunika
IPC: C23F1/00 , H01L21/306 , H01L21/66 , H01L21/67 , H01J37/32 , H01L21/3065 , G01N1/32
CPC classification number: H01L22/12 , G01N1/32 , H01J37/32449 , H01J37/32834 , H01J2237/334 , H01L21/3065 , H01L21/67069
Abstract: The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.
-
公开(公告)号：US20150357249A1
公开(公告)日：2015-12-10
申请号：US14766981
申请日：2014-01-21
Applicant: IAS INC.
Inventor： Katsuhiko Kawabata , Takuma Hayashi , Mitsumasa Ikeuchi , Sungjae Lee , Jin Kunika
IPC: H01L21/66 , H01L21/67 , H01L21/3065
CPC classification number: H01L22/12 , G01N1/32 , H01J37/32449 , H01J37/32834 , H01J2237/334 , H01L21/3065 , H01L21/67069
Abstract: The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.
Abstract translation: 本发明提供一种蚀刻装置，适用于蚀刻构成基板的基板或体硅上的多晶硅。 本发明涉及一种蚀刻装置，其包括气体流动调节装置，其允许蚀刻气体从基板的周边流动到基板的大致中心，并且涉及能够以均匀的方式蚀刻多晶硅或体硅的技术 在整个基板表面上的厚度。 此外，气体流量调节装置以可垂直移动的方式安装，并且可以通过气流调节装置的调节来控制蚀刻速度。
-
公开(公告)号：US20210118751A1
公开(公告)日：2021-04-22
申请号：US17043964
申请日：2019-04-08
Applicant: Kioxia Corporation , IAS Inc.
Inventor： Jiahong Wu , Katsuhiko Kawabata , Mitsumasa Ikeuchi , Sungjae Lee
IPC: H01L21/66 , H01L21/02 , H01L21/3213 , C30B33/08 , C30B29/06
Abstract: The present invention provides a method for analyzing a silicon substrate, by which impurities such as a very small amount of metal in a silicon substrate provided with a thick nitride film can be analyzed with high accuracy with ICP-MS, and is characterized by use of a silicon substrate analysis apparatus including an analysis scan port having a load port, a substrate conveyance robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis stage and a nozzle for analysis of a substrate; an analysis liquid collection unit; and an analyzer for performing inductive coupling plasma analysis.
-
公开(公告)号：US20180024068A1
公开(公告)日：2018-01-25
申请号：US15540320
申请日：2016-08-16
Applicant: IAS Inc.
Inventor： Katsuhiko Kawabata , Tatsuya Ichinose , Mitsumasa Ikeuchi
CPC classification number: G01N21/68 , G01N21/714 , G01N21/73 , G01N21/85 , G01N27/62 , G01N2001/002 , G01N2001/1006 , G01N2021/8411 , H01J49/105
Abstract: The present invention relates to an analysis system capable of online transferring an analysis sample and promptly acquiring an analysis result. The analysis system capable of analyzing the analysis samples supplied from at least two sites, with one analysis apparatus, and requiring no cleaning process for a nebulizer and a spray chamber, is provided. The present invention relates to analysis system including at least two sample individually transferring units. Each sample transferring path of the sample individually transferring units is coupled to a plasma torch of a common analysis unit including the one analysis apparatus with inductively-coupled plasma or microwave plasma. Each sample transferring path has a main flow path, a makeup gas supply path, and a drain flow path. The plasma torch has a sample introducing pipe that introduces the atomized analysis sample, provided at a substantially center. The inner diameter of the drain flow path is equivalent to or larger than the inner diameter of an inlet portion of the sample introducing pipe of the plasma torch.
-
-
-
-
-
Search Results
6
records
(took 0.01 seconds)
