公开(公告)号：US11422071B2

公开(公告)日：2022-08-23

申请号：US17415191

申请日：2019-11-06

Applicant: IAS, INC.

Inventor： Katsuhiko Kawabata ,  Sungjae Lee ,  Takuma Hayashi

IPC: G01N1/28 ,  G01N19/08 ,  G01N1/10

Abstract: A substrate analysis method using a nozzle for substrate analysis which discharges an analysis liquid from a tip thereof, scans a substrate surface with a discharged analysis liquid, and sucks the analysis liquid. This is done by arranging a liquid catch plate that catches the discharged analysis liquid, thus retaining analysis liquid discharged between the nozzle tip and the liquid catch plate; positioning the substrate so that the end part thereof can be inserted between the nozzle tip and the liquid catch plate; bringing the end part of the substrate into contact with analysis liquid retained between the nozzle tip and liquid catch plate; and moving the nozzle and liquid catch plate concurrently along a periphery of the substrate, while keeping the end part of the substrate in contact with the analysis liquid, to analyze the end part of the substrate.

公开(公告)号：US09741627B2

公开(公告)日：2017-08-22

申请号：US14766981

申请日：2014-01-21

Applicant: IAS Inc.

Inventor： Katsuhiko Kawabata ,  Takuma Hayashi ,  Mitsumasa Ikeuchi ,  Sungjae Lee ,  Jin Kunika

IPC: C23F1/00 ,  H01L21/306 ,  H01L21/66 ,  H01L21/67 ,  H01J37/32 ,  H01L21/3065 ,  G01N1/32

CPC classification number: H01L22/12 ,  G01N1/32 ,  H01J37/32449 ,  H01J37/32834 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.

公开(公告)号：US20150357249A1

公开(公告)日：2015-12-10

申请号：US14766981

申请日：2014-01-21

Applicant: IAS INC.

Inventor： Katsuhiko Kawabata ,  Takuma Hayashi ,  Mitsumasa Ikeuchi ,  Sungjae Lee ,  Jin Kunika

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L22/12 ,  G01N1/32 ,  H01J37/32449 ,  H01J37/32834 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.

Abstract translation: 本发明提供一种蚀刻装置，适用于蚀刻构成基板的基板或体硅上的多晶硅。 本发明涉及一种蚀刻装置，其包括气体流动调节装置，其允许蚀刻气体从基板的周边流动到基板的大致中心，并且涉及能够以均匀的方式蚀刻多晶硅或体硅的技术 在整个基板表面上的厚度。 此外，气体流量调节装置以可垂直移动的方式安装，并且可以通过气流调节装置的调节来控制蚀刻速度。