Invention Grant
- Patent Title: Recessed contact to semiconductor nanowires
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Application No.: US15221811Application Date: 2016-07-28
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Publication No.: US09818830B2Publication Date: 2017-11-14
- Inventor: Ingvar Åberg , Martin Magnusson , Damir Asoli , Lars Ivar Samuelson , Jonas Ohlsson
- Applicant: SOL VOLTAICS AB
- Applicant Address: SE Lund
- Assignee: SOL VOLTAICS AB
- Current Assignee: SOL VOLTAICS AB
- Current Assignee Address: SE Lund
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L29/41
- IPC: H01L29/41 ; H01L33/38 ; H01L31/0224 ; H01L33/42 ; H01L33/16 ; H01L31/0352 ; H01L31/0735 ; H01L31/18 ; H01L21/02 ; H01L29/06 ; H01L31/042 ; H01L33/02 ; H01L21/311 ; H01L27/15 ; H01L21/3213 ; H01L29/20
Abstract:
A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.
Public/Granted literature
- US20160336411A1 RECESSED CONTACT TO SEMICONDUCTOR NANOWIRES Public/Granted day:2016-11-17
Information query
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