Invention Grant
- Patent Title: High brightness ion beam extraction using bias electrodes and magnets proximate the extraction aperture
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Application No.: US14809608Application Date: 2015-07-27
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Publication No.: US09922795B2Publication Date: 2018-03-20
- Inventor: Bon-Woong Koo , Alexandre Likhanskii , Svetlana B. Radovanov , Anthony Renau
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Agency: Nields, Lemack & Frame, LLC
- Main IPC: H01J37/14
- IPC: H01J37/14 ; H01J37/08 ; H01J27/02 ; H01J37/145 ; H01J37/32

Abstract:
An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a RF ion source or an indirectly heated cathode (IHC) ion source, having an extraction aperture. Disposed proximate the extraction aperture is a bias electrode, which has a hollow center portion that is aligned with the extraction aperture. A magnetic field is created along the perimeter of the hollow center portion, which serves to contain electrons within a confinement region. Electrons in the confinement region energetically collide with neutral particles, increasing the number of ions that are created near the extraction aperture. The magnetic field may be created using two magnets that are embedded in the bias electrode. Alternatively, a single magnet or magnetic coils may be used to create this magnetic field.
Public/Granted literature
- US20170032927A1 High Brightness Ion Beam Extraction Public/Granted day:2017-02-02
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