公开(公告)号：WO2010135153A3

公开(公告)日：2011-03-10

申请号：PCT/US2010034762

申请日：2010-05-13

Applicant: NANOGRAM CORP ,  SRINIVASAN UMA ,  ZHOU XIN ,  HIESLMAIR HENRY ,  PAKALA NEERAJ

Inventor： SRINIVASAN UMA ,  ZHOU XIN ,  HIESLMAIR HENRY ,  PAKALA NEERAJ

IPC: H01L31/042

CPC classification number: H01L21/22 ,  H01L21/2255 ,  H01L21/228 ,  H01L21/268 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

Abstract: Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/ germanium surface using a laser beam. Deep contacts have been found to be effective for producing efficient solar cells. Dielectric layers can be effectively patterned to provide for selected contact between the current collectors and the doped domains along the semiconductor surface. Rapid processing approaches are suitable for efficient production processes.

Abstract translation: 基于激光的工艺单独使用或组合使用以有效地处理半导体和/或当前采集结构的掺杂域。 例如，掺杂剂可以使用激光束从裸硅/锗表面驱动到硅/锗半导体层中。 已经发现深层接触对于生产高效太阳能电池是有效的。 电介质层可以被有效地构图以提供集电器和沿着半导体表面的掺杂区域之间的选择的接触。 快速处理方法适用于高效的生产工艺。

公开(公告)号：WO2009094176A2

公开(公告)日：2009-07-30

申请号：PCT/US2009000428

申请日：2009-01-23

Applicant: NANOGRAM CORP ,  BAILEY ROBERT J ,  SANDERS WILLIAM A ,  MOSSO RONALD J ,  HIESLMAIR HENRY ,  MORRIS JULIO E ,  MOGAARD MARTIN E ,  HERNANDEZ JACOB A

Inventor： BAILEY ROBERT J ,  SANDERS WILLIAM A ,  MOSSO RONALD J ,  HIESLMAIR HENRY ,  MORRIS JULIO E ,  MOGAARD MARTIN E ,  HERNANDEZ JACOB A

CPC classification number: C23C16/402 ,  C23C16/56 ,  Y10T156/17 ,  Y10T428/249967

Abstract: Layer transfer approaches are described to take advantage of large area, thin inorganic foils formed onto a porous release layer. In particular, since the inorganic foils can be formed from ceramics and/or crystalline materials that do not bend a large amount, approaches are described to provide for gradual pulling along an edge to separate the foil from a holding surface along a curved surface designed to not excessively bend the foil such that the foil is not substantially damaged in the transfer process. Apparatuses are described to perform the transfer with a rocking motion or with a rotating cylindrical surface. Furthermore, stabilization of porous release layers can improve the qualities of resulting inorganic foils formed on the release layer. In particular, flame treatments can provide improved release layer properties, and the deposition of an interpenetrating stabilization composition can be deposited using CVD to stabilize a porous layer.

Abstract translation: 描述了层转移方法以利用形成在多孔释放层上的大面积的薄无机箔。 特别地，由于无机箔可以由不会大量弯曲的陶瓷和/或结晶材料形成，所以描述了一些方法来提供沿着边缘的逐渐拉伸，以沿着弯曲表面将箔与保持表面分离，所述弯曲表面被设计成 不会使箔过度弯曲，使得箔在转印过程中基本上不被损坏。 描述了用摇摆运动或旋转的圆柱形表面进行传送的装置。 此外，多孔剥离层的稳定化可以提高形成在剥离层上的所得无机箔的质量。 特别地，火焰处理可以提供改善的剥离层性质，并且可以使用CVD沉积互穿稳定化组合物的沉积以稳定多孔层。

公开(公告)号：WO2007106502A3

公开(公告)日：2007-11-29

申请号：PCT/US2007006357

申请日：2007-03-13

Applicant: NANOGRAM CORP ,  HIESMAIR HENRY ,  MOSSO RONALD J ,  LYNCH ROBERT B ,  CHIRUVOLU SHIVKUMAR ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  SOLAYAPPAN NARAYAN ,  CORNELL RONALD M

Inventor： HIESMAIR HENRY ,  MOSSO RONALD J ,  LYNCH ROBERT B ,  CHIRUVOLU SHIVKUMAR ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  SOLAYAPPAN NARAYAN ,  CORNELL RONALD M

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/31

CPC classification number: C23C16/54 ,  C23C16/01 ,  C23C16/24 ,  C23C16/482 ,  C23C16/483 ,  H01L31/0236 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/0475 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T29/41 ,  Y10T428/14 ,  Y10T428/24802

Abstract: Thin semiconductor foils can be formed using light reactive deposition. These foils can have an average thickness of less than 100 microns. In some embodiments, the semiconductor foils can have a large surface area, such as greater than about 900 square centimeters. The foil can be free standing or releasably held on one surface. The semiconductor foil can comprise elemental silicon, elemental germanium, silicon carbide, doped forms thereof, alloys thereof or mixtures thereof. The foils can be formed using a release layer that can release the foil after its deposition. The foils can be patterned, cut and processed in other ways for the formation of devices. Suitable devices that can be formed form the foils include, for example, photovoltaic modules and display control circuits.

Abstract translation: 可以使用光反应性沉积形成薄的半导体箔。 这些箔片的平均厚度可以小于100微米。 在一些实施例中，半导体箔可以具有大的表面积，例如大于约900平方厘米。 箔可以自由站立或可释放地保持在一个表面上。 半导体箔可以包括元素硅，元素锗，碳化硅，其掺杂形式，其合金或其混合物。 箔可以使用可以在其沉积后释放箔的释放层来形成。 箔可以以其他方式图案化，切割和加工以形成装置。 可以由箔形成的合适的装置包括例如光伏模块和显示控制电路。

公开(公告)号：WO9961244A8

公开(公告)日：2000-03-09

申请号：PCT/US9911257

申请日：1999-05-20

Applicant: NANOGRAM CORP

Inventor： KUMAR SUJEET ,  BI XIANGXIN ,  KAMBE NOBUYUKI

IPC: C01B33/113 ,  C01B33/12 ,  C01B33/18 ,  C09G1/02 ,  C09K3/14 ,  C11D3/14 ,  C11D7/14 ,  H01B1/06 ,  B32B19/00 ,  B32B5/16 ,  C01B15/14 ,  C01B17/00 ,  C01B33/00 ,  C11D9/00 ,  C11D9/02 ,  C11D9/04 ,  D02G3/00 ,  C11D3/58 ,  C11D65/06

CPC classification number: C11D3/124 ,  C01B33/113 ,  C01P2004/64 ,  C11D7/14 ,  Y10T428/2982

Abstract: A collection of silicon oxide nanoparticles have an average diameter from about 5 nm to about 100 nm. The collection of silicon oxide nanoparticles effectively include no particles with a diameter greater than about four times the average diameter. The particles generally have a spherical morphology. Methods for producing the nanoparticles involve laser pyrolysis. The silicon oxide nanoparticles are effective for the production of improved polishing compositions including compositions useful for chemical-mechanical polishing.

Abstract translation: 氧化硅纳米颗粒的集合具有约5nm至约100nm的平均直径。 氧化硅纳米颗粒的收集有效地包括直径大于平均直径的四倍的颗粒。 颗粒通常具有球形形态。 制备纳米颗粒的方法包括激光热解。 氧化硅纳米颗粒对于生产改进的抛光组合物是有效的，包括用于化学机械抛光的组合物。

公开(公告)号：WO2006068846A3

公开(公告)日：2006-10-26

申请号：PCT/US2005044403

申请日：2005-12-07

Applicant: NANOGRAM CORP ,  CHIRUVOLU SHIVKUMAR ,  CHAPIN MICHAEL EDWARD

Inventor： CHIRUVOLU SHIVKUMAR ,  CHAPIN MICHAEL EDWARD

IPC: B05D1/02 ,  B05D1/34 ,  B05D1/42 ,  C23C14/02 ,  C23C16/02 ,  C23C16/455 ,  C23C16/48

CPC classification number: H01M8/0228 ,  B05D3/06 ,  C23C8/00 ,  C23C16/45519 ,  C23C16/483 ,  C23C26/00 ,  H01M8/0252 ,  H01M8/1231 ,  H01M8/141 ,  H01M2008/1293 ,  H01M2008/147 ,  Y02E60/526

Abstract: Methods for forming coated substrates can be based on depositing material from a flow onto a substrate in which the coating material is formed by a reaction within the flow. In process chamber (300), the product materials may be formed in a reaction driven by photon energy absorbed from a radiation beam supplied via a light entry port (320). The flow with the product stream may be directed at the substrate via gas/paper inlet tube (306) connected to nozzle (308) and exiting by exhaust port (322). The substrate may be moved relative to the flow, such as via arm (318), which translates substrate carrier (316) through the product stream. Coating materials can be formed with densities of 65% to 95% of the fully densified coating material with a very high level of coating uniformity.

Abstract translation: 用于形成涂覆的基底的方法可以基于将材料从流体沉积到基底上，其中通过流体内的反应形成涂层材料。 在处理室（300）中，产品材料可以由从经由光入口（320）提供的辐射束吸收的光子能量驱动的反应中形成。 具有产物流的流可以经由连接到喷嘴（308）并通过排气口（322）排出的气体/纸入口管（306）引导到基板。 衬底可以相对于流动移动，例如经由臂（318），其将衬底载体（316）平移通过产物流。 涂层材料可以形成具有非常高水平的涂层均匀度的完全致密涂层材料的65％至95％的密度。

公开(公告)号：WO2012006071A3

公开(公告)日：2012-04-19

申请号：PCT/US2011042142

申请日：2011-06-28

Applicant: NANOGRAM CORP ,  CHIRUVOLU SHIVKUMAR ,  ALTMAN IGOR ,  FREY BERNARD M ,  LI WEIDONG ,  LIU GUOJUN ,  LYNCH ROBERT B ,  PENGRA-LEUNG GINA ELIZABETH ,  SRINIVASAN UMA

Inventor： CHIRUVOLU SHIVKUMAR ,  ALTMAN IGOR ,  FREY BERNARD M ,  LI WEIDONG ,  LIU GUOJUN ,  LYNCH ROBERT B ,  PENGRA-LEUNG GINA ELIZABETH ,  SRINIVASAN UMA

IPC: B01J13/00 ,  B01J19/08 ,  C01B33/02 ,  C01G17/00 ,  C09D11/00

CPC classification number: C09D11/38 ,  B01D21/262 ,  B01J19/121 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0875 ,  B82Y30/00 ,  C01B33/02 ,  C08K3/08 ,  C08K3/36 ,  C08K9/02 ,  C09D5/24 ,  C09D7/67 ,  C09D7/68 ,  C09D7/80 ,  C09D11/037 ,  C09D11/101 ,  C09D11/322 ,  C09D11/36 ,  C09D11/52 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02601 ,  H01L21/02628 ,  H01L23/4828 ,  H01L23/53276 ,  H01L31/00 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/1864 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  H01L2924/00

Abstract: Laser pyrolysis reactor designs and corresponding reactant inlet nozzles are described to provide desirable particle quenching that is particularly suitable for the synthesis of elemental silicon particles. In particular, the nozzles can have a design to encourage nucleation and quenching with inert gas based on a significant flow of inert gas surrounding the reactant precursor flow and with a large inert entrainnient flow effectively surrounding the reactant precursor and quench gas flows. Improved silicon nanoparticle inks are described that has silicon nanoparticles without any surface modification with organic compounds. The silicon ink properties can be engineered for particular printing applications, such as inkjet printing, gravure printing or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon nanoparticles.

Abstract translation: 描述了激光热解反应器设计和相应的反应物入口喷嘴以提供特别适用于元素硅颗粒的合成的期望的颗粒猝灭。 特别地，基于围绕反应物前体流的大量惰性气体以及有效围绕反应物前体和骤冷气体流的大的惰性夹带流，喷嘴可以具有鼓励用惰性气体进行成核和淬火的设计。 描述了改进的硅纳米粒子油墨，其具有硅纳米粒子而没有用有机化合物进行任何表面改性。 硅油墨特性可以针对特定的印刷应用进行设计，例如喷墨印刷，凹版印刷或丝网印刷。 描述了适当的处理方法，为墨水设计提供了灵活性，而没有表面修饰硅纳米颗粒。

公开(公告)号：WO2011035306A3

公开(公告)日：2011-10-06

申请号：PCT/US2010049661

申请日：2010-09-21

Applicant: NANOGRAM CORP ,  LIU GUOJUN ,  MORRIS CLIFFORD M ,  ALTMAN IGOR ,  SRINIVASAN UMA ,  CHIRUVOLU SHIVKUMAR

Inventor： LIU GUOJUN ,  MORRIS CLIFFORD M ,  ALTMAN IGOR ,  SRINIVASAN UMA ,  CHIRUVOLU SHIVKUMAR

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/068 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/076 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: High quality silicon inks are used to form polycrystalline layers within thin film solar cells having a p-n junction. The particles deposited with the inks can be sintered to form the silicon film, which can be intrinsic films or doped films. The silicon inks can have a z- average secondary particle size of no more than about 250 nm as determined by dynamic light scattering on an ink sample diluted to 0.4 weight percent if initially having a greater concentration. In some embodiments, an intrinsic layer can be a composite of an amorphous silicon portion and a crystalline silicon portion.

Abstract translation: 高质量的硅油墨用于在具有p-n结的薄膜太阳能电池内形成多晶硅层。 沉积有油墨的颗粒可以被烧结以形成硅膜，其可以是本征膜或掺杂膜。 如通过初始具有较高浓度稀释至0.4重量％的油墨样品上的动态光散射确定的，硅油墨可具有不超过约250nm的z-平均二次粒度。 在一些实施例中，本征层可以是非晶硅部分和晶体硅部分的复合物。

公开(公告)号：WO2006127746A3

公开(公告)日：2009-04-16

申请号：PCT/US2006019983

申请日：2006-05-23

Applicant: NANOGRAM CORP ,  CHIRUVOLU SHIVKUMAR ,  DU HUI ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  MOSSO RONALD J ,  KAMBE NOBUYUKI

Inventor： CHIRUVOLU SHIVKUMAR ,  DU HUI ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  MOSSO RONALD J ,  KAMBE NOBUYUKI

IPC: B32B5/16

CPC classification number: B01J19/121 ,  B01J4/002 ,  B01J19/085 ,  B01J19/088 ,  B01J19/123 ,  B01J19/125 ,  B01J19/126 ,  B01J19/127 ,  B01J19/128 ,  B01J19/26 ,  B01J2219/0849 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0877 ,  B01J2219/0892 ,  B82Y30/00 ,  C01P2004/04 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12 ,  C08J3/12 ,  C08J3/128 ,  C08J2383/02 ,  C09C1/3684 ,  C09C3/10 ,  C09C3/12

Abstract: Collections of composite particles comprise inorganic particles and another composition, such as a polymer and/or a coating composition. In some embodiments, the composite particles have small average particle sizes, such as no more than about 10 microns or no more than about 2.5 microns. The composite particles can have selected particle architectures. The inorganic particles can have compositions selected for particular properties. The composite particles can be effective for printing applications, for the formation of optical coatings, and other desirable applications.

Abstract translation: 复合颗粒的收集包括无机颗粒和另一种组合物，例如聚合物和/或涂料组合物。 在一些实施方案中，复合颗粒具有小的平均粒度，例如不超过约10微米或不大于约2.5微米。 复合颗粒可以具有选定的颗粒结构。 无机颗粒可以具有特定性质的组合物。 复合颗粒可用于印刷应用，用于形成光学涂层和其它期望的应用。

公开(公告)号：WO2008156631A3

公开(公告)日：2009-02-12

申请号：PCT/US2008007330

申请日：2008-06-12

Applicant: NANOGRAM CORP ,  HIESLMAIR HENRY ,  MOSSO RONALD J ,  SOLAYAPPAN NARAYAN ,  CHIRUVOLU SHIVKUMAR ,  MORRIS JULIO E

Inventor： HIESLMAIR HENRY ,  MOSSO RONALD J ,  SOLAYAPPAN NARAYAN ,  CHIRUVOLU SHIVKUMAR ,  MORRIS JULIO E

IPC: C23C16/455 ,  C23C16/00 ,  H01L21/205

CPC classification number: C30B25/02 ,  C23C16/01 ,  C23C16/24 ,  C23C16/545 ,  C30B13/00 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02532 ,  H01L31/1804 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/26 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265

Abstract: Sub-atmospheric pressure chemical vapor deposition is described with a directed reactant flow and a substrate that moves relative to the flow. Thus, using this CVD configuration a relatively high deposition rate can be achieved while obtaining desired levels of coating uniformity. Deposition approaches are described to place one or more inorganic layers onto a release layer, such as a porous, particulate release layer. In some embodiments, the release layer is formed from a dispersion of submicron particles that are coated onto a substrate. The processes described can be effective for the formation of silicon films that can be separated with the use of a release layer into a silicon foil. The silicon foils can be used for the formation of a range of semiconductor based devices, such as display circuits or solar cells.

Abstract translation: 使用定向反应物流和相对于流动移动的基底来描述亚大气压化学气相沉积。 因此，使用这种CVD构造可以获得相当高的沉积速率，同时获得所需的涂层均匀度。 描述沉积方法以将一个或多个无机层置于剥离层上，例如多孔的颗粒脱模层。 在一些实施方案中，释放层由涂覆在基材上的亚微米颗粒的分散体形成。 所描述的方法可以有效地形成可以使用剥离层分离成硅箔的硅膜。 硅箔可用于形成诸如显示电路或太阳能电池的一系列半导体器件。

公开(公告)号：WO2007106502A8

公开(公告)日：2008-10-23

申请号：PCT/US2007006357

申请日：2007-03-13

Applicant: NANOGRAM CORP ,  HIESLMAIR HENRY ,  MOSSO RONALD J ,  LYNCH ROBERT B ,  CHIRUVOLU SHIVKUMAR ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  SOLAYAPPAN NARAYAN ,  CORNELL RONALD M

Inventor： HIESLMAIR HENRY ,  MOSSO RONALD J ,  LYNCH ROBERT B ,  CHIRUVOLU SHIVKUMAR ,  MCGOVERN WILLIAM E ,  HORNE CRAIG R ,  SOLAYAPPAN NARAYAN ,  CORNELL RONALD M

IPC: H01L21/20 ,  H01L21/205 ,  H01L21/31

CPC classification number: C23C16/54 ,  C23C16/01 ,  C23C16/24 ,  C23C16/482 ,  C23C16/483 ,  H01L31/0236 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/0475 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T29/41 ,  Y10T428/14 ,  Y10T428/24802

Abstract: Thin semiconductor foils can be formed using light reactive deposition. These foils can have an average thickness of less than 100 microns. In some embodiments, the semiconductor foils can have a large surface area, such as greater than about 900 square centimeters. The foil can be free standing or releasably held on one surface. The semiconductor foil can comprise elemental silicon, elemental germanium, silicon carbide, doped forms thereof, alloys thereof or mixtures thereof. The foils can be formed using a release layer that can release the foil after its deposition. The foils can be patterned, cut and processed in other ways for the formation of devices. Suitable devices that can be formed form the foils include, for example, photovoltaic modules and display control circuits.

Abstract translation: 可以使用光反应性沉积形成薄的半导体箔。 这些箔片的平均厚度可以小于100微米。 在一些实施例中，半导体箔可以具有大的表面积，例如大于约900平方厘米。 箔可以自由站立或可释放地保持在一个表面上。 半导体箔可以包括元素硅，元素锗，碳化硅，其掺杂形式，其合金或其混合物。 箔可以使用可以在其沉积后释放箔的释放层来形成。 箔可以以其他方式图案化，切割和加工以形成装置。 可以由箔形成的合适的装置包括例如光伏模块和显示控制电路。