公开(公告)号：WO2011038470A4

公开(公告)日：2011-06-23

申请号：PCT/BG2010000016

申请日：2010-09-27

Applicant: AMG TECHNOLOGY LTD ,  STAVROV VLADIMIR

Inventor： STAVROV VLADIMIR

IPC: G01Q60/38 ,  G01Q10/06 ,  G01Q70/10 ,  G01Q70/12

CPC classification number: G01Q70/12 ,  G01Q10/045 ,  G01Q60/38 ,  G01Q70/10

Abstract: The sensors for SPM consist of a body, microcantilever and probe member, having a common flat surface in which at least one functionalization element shaped as trench and/or opening is formed with a heterogeneous probe element assembled in it, such as carbon nanotube (CNT) or other type nano-sized tubes, fibers, micro-crystals etc., including such with a complex shape and specially functionalized. In a sensor embodiment piezoresistors are used for transdusing the bending oscillation of the microcantilever and probe member in electrical signal. The three-dimensional measurement method allows using common scanning microscopy system, in a particular point of the scanning grid to perform measurement in all three directions without translating/rotating the system and/or the sample or change the sensor, by controlled periodic actuation of sensor with microcantilever and probe member with individual oscillation characteristics of bending without torsion in each direction of measurement, which characteristics are discernible from one another upon measurement and the number of the probe elements used is sufficient to ensure measurement in each of the three directions. The invention includes also a method for manufacturing the described sensor.

Abstract translation: 用于SPM的传感器由主体，微悬臂梁和探针构件组成，具有共同的平坦表面，其中形成为沟槽和/或开口的至少一个功能化元件形成有组装在其中的异质探针元件，例如碳纳米管（CNT ）或其他类型的纳米尺寸的管，纤维，微晶等，包括具有复杂形状和特别功能化的。 在传感器实施例中，压敏电阻器用于以电信号转换微型悬臂梁和探针构件的弯曲振荡。 三维测量方法允许使用普通扫描显微镜系统，在扫描网格的特定点，在所有三个方向上执行测量，而不需要通过传感器的受控周期性致动来平移/旋转系统和/或样品或改变传感器 具有在每个测量方向上具有弯曲而没有扭转的单独振动特性的微型悬臂梁和探针构件，这些特性在测量时可以彼此辨别，并且所使用的探针元件的数量足以确保在三个方向中的每一个方向上的测量。 本发明还包括用于制造所述传感器的方法。

公开(公告)号：WO2010139034A4

公开(公告)日：2011-06-30

申请号：PCT/BG2010000007

申请日：2010-06-01

Applicant: AMG TECHNOLOGY LTD ,  STAVROV VLADIMIR

Inventor： STAVROV VLADIMIR

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/032 ,  B81B2203/0118 ,  B81C2203/0742

Abstract: The method of fabricating devices for microelectromechanical systems (MEMS) with electrical components in their sidewalls is applicable for the production of microstructures with various electrical and mechanical properties that can be used for sensing in different technical areas. The method consists of three stages and through numerous repetitions of processes of creation of protective layers, photolithographical patterning, consecutive etching processes and doping via high temperature ion diffusion performed over non-deformable semiconductor basic structures, for example monocrystalline Silicon basic structures, it gives opportunity of building of electrical components in the sidewalls of MEMS devices. The electrical components so obtained can have equal or different parameters and can be disposed in parts of or the whole sidewalls of such devices. With MEMS devices realized according to the claimed method measurements with considerably increased accuracy, precision and sensitivity can be made.

Abstract translation: 制造具有在其侧壁中的电部件的微机电系统（MEMS）的器件的方法适用于制造具有可用于在不同技术领域中感测的各种电特性和机械特性的微结构。 该方法包括三个阶段，并且通过多次重复的保护层的创建，光刻图案化，连续的蚀刻工艺和经由在不可变形的半导体基础结构（例如单晶硅基础结构）上执行的高温离子扩散进行掺杂的过程的重复， 在MEMS器件的侧壁中构建电子组件。 如此获得的电气部件可以具有相同或不同的参数，并且可以布置在这些装置的部分或整个侧壁中。 根据所要求的方法测量实现的MEMS器件具有显着提高的精度，可以实现精度和灵敏度。

公开(公告)号：WO2010139034A3

公开(公告)日：2011-05-12

申请号：PCT/BG2010000007

申请日：2010-06-01

Applicant: AMG TECHNOLOGY LTD ,  STAVROV VLADIMIR

Inventor： STAVROV VLADIMIR

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/032 ,  B81B2203/0118 ,  B81C2203/0742

Abstract: The method of fabricating devices for microelectromechanical systems (MEMS) with electrical components in their sidewalls is applicable for the production of microstructures with various electrical and mechanical properties that can be used for sensing in different technical areas. The method consists of three stages and through numerous repetitions of processes of creation of protective layers, photolithographical patterning, consecutive etching processes and doping via high temperature ion diffusion performed over non-deformable semiconductor basic structures, for example monocrystalline Silicon basic structures, it gives opportunity of building of electrical components in the sidewalls of MEMS devices. The electrical components so obtained can have equal or different parameters and can be disposed in parts of or the whole sidewalls of such devices. With MEMS devices realized according to the claimed method measurements with considerably increased accuracy, precision and sensitivity can be made.

Abstract translation: 制造具有其侧壁中的电气部件的微机电系统（MEMS）的装置的方法适用于具有各种电气和机械特性的微结构的生产，所述微观结构可用于不同技术领域的感测。 该方法由三个阶段组成，通过多次重复制备保护层，光刻图案，连续蚀刻工艺和通过在非可变形半导体基本结构上执行的高温离子扩散（例如单晶硅基本结构）的掺杂过程，它给予机会 在MEMS器件的侧壁中构建电气部件。 如此获得的电气部件可以具有相等或不同的参数，并且可以设置在这些装置的部分或整个侧壁中。 利用根据所要求保护的方法实现的MEMS器件，可以显着提高精度，精度和灵敏度。

公开(公告)号：WO2018015835A1

公开(公告)日：2018-01-25

申请号：PCT/IB2017/054103

申请日：2017-07-07

Applicant: AMG TECHNOLOGY LTD. ,  STAVROV, Vladimir

Inventor： STAVROV, Vladimir

IPC: G01Q60/38 ,  G01Q70/10

CPC classification number: G01Q70/10 ,  G01Q60/38

Abstract: The invention relates to microcantilever sensors for atomic force microscopy (AFM), which are particularly suitable for use in combined systems exploiting simultaneously AFM and other type of microscopy, like: optical or electron, as well as a method of local micro / nano processing. The sensor of the invention comprises a body with a microcantilever extending from it, comprising flexible base portion and probe portion. The sensor contains in the probe portion an opening with symmetrical connecting flexure elements around it. To ensure the visibility to the area of interaction between the probe and the sample and to the probe tip, the base of the probe ends in the opening and the radius r and height h of the base of the probe satisfy the relationship: arctg (r/h) , where α is the apparatus dependant tilt angle of the sensor to the plane of the sample. The spring constants of the both portions of the invented sensor can be set separately and the sensor may further comprise: strain sensitive elements for detecting the microcantilever bending and additional openings in the base part; bimorph actuator, galvanic connecting tracks and /or other functional elements.

Abstract translation: 本发明涉及用于原子力显微镜（AFM）的微悬臂梁传感器，其特别适用于同时利用AFM和其他类型的显微镜的组合系统，如光学或电子，以及局部微/纳米处理的方法。 本发明的传感器包括具有从其延伸的微悬臂的主体，该主体包括柔性基部和探针部分。 传感器在探头部分包含一个开口，开口周围具有对称的连接弯曲元件。 为了确保探针与样品之间以及探针尖端之间的相互作用区域的可见性，探针底部在开口处终止，并且探针底部的半径r和高度h满足以下关系：arctg（r / h）<α，其中α是传感器相对于样品平面的装置相关倾角。 本发明的传感器的两个部分的弹簧常数可以单独设置，并且传感器可以进一步包括：应变敏感元件，用于检测微小悬臂弯曲和基座部分中的附加开口; 双晶片致动器，电流连接轨道和/或其他功能元件。

公开(公告)号：WO2011038470A1

公开(公告)日：2011-04-07

申请号：PCT/BG2010/000016

申请日：2010-09-27

Applicant: AMG TECHNOLOGY LTD. ,  STAVROV, Vladimir

Inventor： STAVROV, Vladimir

IPC: G01Q60/38 ,  G01Q70/10 ,  G01Q70/12 ,  G01Q10/06

CPC classification number: G01Q70/12 ,  G01Q10/045 ,  G01Q60/38 ,  G01Q70/10

Abstract: The sensors for SPM consist of a body, microcantilever and probe member, having a common flat surface in which at least one functionalization element shaped as trench and/or opening is formed with a heterogeneous probe element assembled in it, such as carbon nanotube (CNT) or other type nano-sized tubes, fibers, micro-crystals etc., including such with a complex shape and specially functionalized. In a sensor embodiment piezoresistors are used for transdusing the bending oscillation of the microcantilever and probe member in electrical signal. The three-dimensional measurement method allows using common scanning microscopy system, in a particular point of the scanning grid to perform measurement in all three directions without translating/rotating the system and/or the sample or change the sensor, by controlled periodic actuation of sensor with microcantilever and probe member with individual oscillation characteristics of bending without torsion in each direction of measurement, which characteristics are discernible from one another upon measurement and the number of the probe elements used is sufficient to ensure measurement in each of the three directions. The invention includes also a method for manufacturing the described sensor.

Abstract translation: 用于SPM的传感器由本体，微型悬臂梁和探针构件组成，具有共同的平坦表面，其中形成为沟槽和/或开口的至少一个功能化元件形成有组装在 它可以是诸如碳纳米管（CNT）或其他类型的纳米尺寸管，纤维，微晶等，包括具有复杂形状和特殊功能的。 在传感器实施例中，压电电阻器用于在电信号中传输微悬臂梁和探针构件的弯曲振动。 三维测量方法允许使用通用扫描显微系统，在扫描网格的特定点处通过传感器的受控周期性致动在所有三个方向上执行测量而不转换/旋转系统和/或样品或更换传感器 具有在每个测量方向上弯曲而不扭曲的单独振动特性的微型悬臂梁和探针构件，这些特性在测量时彼此可辨别并且所使用的探针元件的数量足以确保在三个方向中的每一个方向上的测量。 本发明还包括用于制造所述传感器的方法。

公开(公告)号：WO2010139034A2

公开(公告)日：2010-12-09

申请号：PCT/BG2010/000007

申请日：2010-06-01

Applicant: AMG TECHNOLOGY LTD. ,  STAVROV, Vladimir

Inventor： STAVROV, Vladimir

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/032 ,  B81B2203/0118 ,  B81C2203/0742

Abstract: The method of fabricating devices for microelectromechanical systems (MEMS) with electrical components in their sidewalls is applicable for the production of microstructures with various electrical and mechanical properties that can be used for sensing in different technical areas. The method consists of three stages and through numerous repetitions of processes of creation of protective layers, photolithographical patterning, consecutive etching processes and doping via high temperature ion diffusion performed over non-deformable semiconductor basic structures, for example monocrystalline Silicon basic structures, it gives opportunity of building of electrical components in the sidewalls of MEMS devices. The electrical components so obtained can have equal or different parameters and can be disposed in parts of or the whole sidewalls of such devices. With MEMS devices realized according to the claimed method measurements with considerably increased accuracy, precision and sensitivity can be made.

Abstract translation: 制造具有其侧壁中的电气部件的微机电系统（MEMS）的装置的方法适用于具有各种电气和机械特性的微结构的生产，所述微观结构可用于不同技术领域的感测。 该方法由三个阶段组成，通过多次重复制备保护层，光刻图案，连续蚀刻工艺和通过在非可变形半导体基本结构上执行的高温离子扩散（例如单晶硅基本结构）的掺杂过程，它给予机会 在MEMS器件的侧壁中构建电气部件。 如此获得的电气部件可以具有相等或不同的参数，并且可以设置在这些装置的部分或整个侧壁中。 利用根据所要求保护的方法实现的MEMS器件，可以显着提高精度，精度和灵敏度。

公开(公告)号：BG66488B1

公开(公告)日：2015-05-29

申请号：BG11109511

申请日：2011-12-01

Applicant: STAVROV VLADIMIR ,  AMG TEHNOLODZHI OOD

Inventor： STAVROV VLADIMIR

IPC: B81C1/00

Abstract: Методътзаизработваненаприборизамикроелектромеханичнисистеми (МЕМС) селектрическиелементивърхустраничнитеимстение приложимзаизработваненамикроструктурис разнообразниелектрическии механичнисвойства, коитомогатдабъдатизползванизаизвършваненаизмерванияв различниобластинатехниката. Методътвключватриетапаи чрезнееднократноповторениенапроцесинасъздаваненамаскии изгражданеназащитнислоеве, структурираненамаските, легиранес високотемпературнайоннадифузияи последващипроцесинаецване, изпълняванивърхунедеформируемиполупроводниковиосновниструктури, напримермонокристалнисилициевиосновниструктури, дававъзможностзаизгражданенаелектрическиелементивърхустраничнитестенинаприборизаМЕМС. Полученитепометодаелектрическиелементимогатдабъдатеднаквиилиразлични, имогатдабъдатразположенипоцелитеиличастотстраничнитестенинаприборите. СМЕМСустройства, реализиранисъгласнометода, могатдасеизвършватизмерваниясъсзначителноувеличенаточност, прецизности чувствителност.@

公开(公告)号：BG104182A

公开(公告)日：2001-09-28

申请号：BG10418200

申请日：2000-02-23

Applicant: STAVROV VLADIMIR T

Inventor： STAVROV VLADIMIR T

IPC: G01L23/10 ,  G01R9/08

Abstract: The semiconductor micromechanical piezoresistive detector with biomorphic actuator is an instrument in which four elements are integrated: micromechanical beam, two-layer actuator with a heater, semiconductor piezoresistive detector and a sensitive element. The instrument can measure different environmental parameters depending on the type of the sensitive element by registering the changes in the resonance frequency of the micromechanical beam. The generation of the mechanical oscillations and the registration of the frequency of the mechanical resonance is made by the admission of AC current across the heater of the biomorphic actuator. 1 claim, 2 figures

公开(公告)号：BG67030B1

公开(公告)日：2020-03-16

申请号：BG11223616

申请日：2016-03-08

Applicant: AMG TEHNOLODZHI OOD ,  STAVROV VLADIMIR

Inventor： STAVROV VLADIMIR

IPC: H01L21/768

Abstract: ИзобретениетосеотнасядоприборотгрупатанамикроелектромеханичнитесистемиилиМЕМСприбор, свграденифункционалниелементиотграфенс дебелинаотединдостоатомнислоя. По-конкретно, МЕМСприборът, съгласноизобретението, сесъстоиоттялои еластиченелемент-конзолаилимембрана, свграденикъмеластичнияелементосвободенифункционалниелементиотултратънкиграфеновислоеве, разположенинадотвор, обхванатиотподходящиконтури, пожеланиесвързанис проводящивръзкии снабденис контакти. Връзкитеи контактитесаотдвуслойнаструктура, представляващаполиранслойотметал, напримермед, върхукойтоимаслойотграфен. Приборъте сразнообразниприложения, напримерфилтър, сензори др., каточрезсъздаденитеспецифичниелектропроводящи, механичнии/илитоплопроводящиконтактии връзкие осигуренавъзможностзанеговотопрактическопромишленоизползване. Изобретениетощенамериприложениев областтанасъздаваненасредствазаизмерване, анализи контролнаразличнивеличинии параметринаоколнатасреда, сприложениев научнитеизследвания, наукитезаживота, материалознанието, индустрията, битаи др.

公开(公告)号：BG112337A

公开(公告)日：2018-01-31

申请号：BG11233716

申请日：2016-07-21

Applicant: AMG TEHNOLODZHI OOD ,  STAVROV VLADIMIR

Inventor： STAVROV VLADIMIR

IPC: G01Q10/04 ,  G01Q20/00

Abstract: Изобретениетосеотнасядомикроконзолнисензоризаатомносиловамикроскопия, коитосаособеноподходящизаизползванев комбиниранисистеми, използващиедновременнокактоатомносиловмикроскоп, такаи оптическа, електроннаилидругвидмикроскопия, илиметодзалокалнамикро/нанообработка. Зацелтамикроконзолниятсензоротизобретението, състоящсеоттялос разпростиращасеотнегомикроконзола, съставенаотеластичниосновнаи сондовачасти, съдържав сондоватасичастотворсъссиметричниоколнисвързващиеластичниелементи. Заосигуряваненавидимостпрезотворакъмобласттанавзаимодействиенасондатас образецаи къмнейниявръх, основатанасондатазавършвав отвораи размеритенарадиуса r наосноватаи височината h насондатаудовлетворяватотношението: arctg(r/h)