公开(公告)号：KR1020140072358A

公开(公告)日：2014-06-13

申请号：KR1020120138888

申请日：2012-12-03

Applicant: 삼성전자주식회사

Inventor： 송주학 ,  김지용 ,  박우현 ,  신효진 ,  정영진

IPC: H01L21/28 ,  H01L21/768

CPC classification number: H01L21/76897 ,  H01L21/7682

Abstract: A method for manufacturing a semiconductor device is provided. A contact mold film is formed on a substrate, and first holes penetrating the contact mold film are formed. A wiring mold film is formed on the contact mold film to form a first air gap inside of the first holes. Trenches are formed which expose the first holes inside the wiring mold film. After forming the trenches, second holes are formed continuously etching the wiring mold film which is disposed inside of the first holes and defines the first air gap. Wirings and contacts connected to each wiring are formed inside of the trenches and the second holes.

Abstract translation: 提供一种制造半导体器件的方法。 在基板上形成接触模膜，形成贯穿接触模膜的第一孔。 在接触模膜上形成布线模膜，以在第一孔内形成第一气隙。 形成露出布线模具膜内的第一孔的沟槽。 在形成沟槽之后，形成第二孔，连续地蚀刻设置在第一孔内部的布线模膜，并限定第一气隙。 连接到每个布线的布线和触点形成在沟槽和第二孔内部。

公开(公告)号：KR1020160118118A

公开(公告)日：2016-10-11

申请号：KR1020150098647

申请日：2015-07-10

Applicant: 삼성전자주식회사

Inventor： 김종원 ,  노기정 ,  원진연 ,  임태완 ,  박우현

IPC: H01L27/115

Abstract: 기판상에 2차원적으로배열되고기판으로부터수직으로연장되는수직채널구조체들이제공된다. 수직채널구조체들상에제공되고제 1 방향을따라배치된수직채널구조체들을연결하는비트라인들이제공된다. 제 1 방향과교차하는제 2 방향을따라수직채널구조체들사이로연장되는복수개의공통소스라인들이제공된다. 비트라인들과동일한수직레벨에위치하고, 복수개의공통소스라인들을전기적으로연결하는소스스트래핑라인이제공된다.