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公开(公告)号：KR1020170031440A
公开(公告)日：2017-03-21
申请号：KR1020150128977
申请日：2015-09-11
Applicant: 성균관대학교산학협력단
Abstract: 본발명은이동식다단사다리에관한것으로서, 본발명에따른이동식다단사다리는제1사다리; 상기제1사다리에슬라이딩이동이가능하게위치된제2사다리; 상기제1사다리의상부에위치된제1도르래; 상기제1사다리의하부에위치된제1윈치; 상기제1사다리의하부에위치된제2윈치; 상기제2사다리의상부에위치된제2도르래; 및상기제1사다리및 상기제2사다리중 어느하나이상에슬리이딩이동이가능하게위치된카트를포함하며, 상기제2사다리는상기제1도르래를거친와이어로제1윈치에연결되며, 상기카트는상기제2도르래를거친와이어로상기제2윈치에연결되는것을특징으로한다. 이에의하여, 윈치등에의하여사다리높이를용이하게조절할수 있는이동식다단사다리가제공된다.
Abstract translation: 本发明涉及一种可移动的多级梯子，其中根据本发明的可移动的多级梯子包括第一梯子; 第二梯子可滑动地定位在第一梯子上; 位于第一梯子上方的第一滑轮; 位于第一梯子下方的第一绞车; 位于第一梯子下方的第二绞车; 位于第二梯子上方的第二滑轮; 并且，以能够任意地移动第一梯子和第二梯子中的至少一方的方式配置有台车，该第二梯子与通过第一绳轮的钢丝绳1绞车连结， 并通过第二个滑轮连接到第二个绞车。 由此，提供了一种可通过绞盘等容易地调整梯子高度的可移动的多梯子梯子。
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公开(公告)号：KR1020140085113A
公开(公告)日：2014-07-07
申请号：KR1020120155320
申请日：2012-12-27
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L29/1606 , C01B32/182
Abstract: Disclosed are a method of transferring graphene and a method of manufacturing a device using the same. The method of transferring graphene includes the steps of: forming a graphene layer on a substrate containing a base metal catalyst (for example, a semiconductor catalyst); forming a thin film on the graphene layer; and separating a lamination structure of the graphene layer and the thin film from the substrate. The base metal catalyst (for example, a semiconductor catalyst) may contain at least one among Ge and SiGe. The thin film may include an inorganic thin film and may have a single layered structure or a multi-layered structure. The step of separating a lamination structure from a substrate may be performed by a physical detachment process. After the step of separating the lamination structure from the substrate, a step of forming an organic film on the substrate may be further performed.
Abstract translation: 公开了转移石墨烯的方法和使用其制造器件的方法。 转移石墨烯的方法包括以下步骤：在含有贱金属催化剂（例如半导体催化剂）的基材上形成石墨烯层; 在石墨烯层上形成薄膜; 以及从所述基板分离所述石墨烯层和所述薄膜的层叠结构。 贱金属催化剂（例如，半导体催化剂）可以含有Ge和SiGe中的至少一种。 薄膜可以包括无机薄膜，并且可以具有单层结构或多层结构。 分离层压结构与基板的步骤可以通过物理分离工艺进行。 在将层叠结构与基板分离的步骤之后，可以进一步进行在基板上形成有机膜的工序。
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公开(公告)号：KR1020140051637A
公开(公告)日：2014-05-02
申请号：KR1020120117911
申请日：2012-10-23
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: B82B3/0009 , C01B32/182 , C01B32/194
Abstract: Provided are a nanowire-graphene structure, a device including the same, and a manufacturing method thereof. The manufacturing method for a nanowire-graphene structure of the present invention includes: a step of growing a graphene layer on a substrate; a step of growing a plurality of nanowires on the graphene layer; and a step of separating the graphene layer from the substrate, wherein the substrate is made of a material which does not form a covalent bond with the graphene layer.
Abstract translation: 提供了纳米线 - 石墨烯结构，包括该纳米线 - 石墨烯结构的装置及其制造方法。 本发明的纳米线 - 石墨烯结构的制造方法包括：在基板上生长石墨烯层的工序; 在石墨烯层上生长多个纳米线的步骤; 以及从所述基板分离所述石墨烯层的步骤，其中所述基板由与所述石墨烯层不形成共价键的材料制成。
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Patent Agency Ranking
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公开(公告)号：KR1020130058407A
公开(公告)日：2013-06-04
申请号：KR1020110124398
申请日：2011-11-25
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B32/186 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01B1/04 , Y10S977/734 , Y10S977/773 , C01B32/15
Abstract: PURPOSE: A graphene ball structure, a manufacturing method thereof, and graphene ball network are provided to be manufactured in a network shape by laminating several graphene ball structures and usefully use lithium ion battery, hydrogen storage device, sensor, capacitor, optical device or electric component etc. CONSTITUTION: A graphene ball structure (100) comprises the core of sphere shape including semiconductor material; a graphene shell (120) including graphene which covers the core. The semiconductor material comprises an IV group semiconductor, III- V group semiconductor or II-VI group semiconductor. The Graphene ball structure is manufactured by chemical vapor deposition using gas including semiconductor material and carbon. The diameter of the core is 1nm ~ 10 μm. The graphene shell has more than one layered structure.
Abstract translation: 目的：提供石墨烯球结构及其制造方法和石墨烯球网，通过层压几个石墨烯球结构而制造成网状，并有效地使用锂离子电池，储氢装置，传感器，电容器，光学装置或电 部件等。构成：石墨烯球结构（100）包括包括半导体材料的球形芯; 包括覆盖芯的石墨烯的石墨烯壳（120）。 半导体材料包括IV族半导体，III-V族半导体或II-VI族半导体。 石墨烯球结构通过使用包括半导体材料和碳的气体的化学气相沉积来制造。 芯的直径为1nm〜10μm。 石墨烯壳具有多于一层的分层结构。
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公开(公告)号：KR101920720B1
公开(公告)日：2018-11-21
申请号：KR1020120155320
申请日：2012-12-27
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L21/336 , H01L29/78
Abstract: 그래핀전사방법및 이를이용한소자의제조방법에관해개시되어있다. 개시된그래핀전사방법은비금속촉매(예컨대, 반도체촉매)를포함하는기판상에그래핀층을형성하는단계, 상기그래핀층상에박막을형성하는단계및 상기기판으로부터상기그래핀층과상기박막의적층구조물을분리하는단계를포함할수 있다. 상기비금속촉매(예컨대, 반도체촉매)는 Ge 및 SiGe 중적어도하나를포함할수 있다. 상기박막은무기물박막일수 있고, 단층또는다층구조로형성할수 있다. 상기기판으로부터상기적층구조물을분리하는단계는물리적박리공정으로수행할수 있다. 상기기판으로부터상기적층구조물을분리하는단계전, 상기박막상에유기막을형성하는단계를더 수행할수 있다.
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公开(公告)号：KR101910977B1
公开(公告)日：2018-10-24
申请号：KR1020110124398
申请日：2011-11-25
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B32/186 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01B1/04 , Y10S977/734 , Y10S977/773
Abstract: 그래핀볼 구조체및 그제조방법이개시된다. 개시된그래핀볼 구조체는, 반도체물질을포함하는구 형상의코어(core) 및상기코어를둘러싸도록형성되는것으로, 그래핀을포함하는그래핀셸(graphene shell)을포함한다.
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公开(公告)号：KR101851570B1
公开(公告)日：2018-04-25
申请号：KR1020110127863
申请日：2011-12-01
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C08K3/04 , C08L101/00 , C01B31/04 , H01L35/22
CPC classification number: H01L35/28 , B32B3/263 , B32B3/30 , B82Y30/00 , H01L35/22 , H01L35/32 , Y10T428/24521 , Y10T428/24612
Abstract: 그래핀과폴리머의복합체및 그제조방법이개시된다. 개시된그래핀과폴리머의복합체는 3차원형상을가지는적어도하나의폴리머구조물; 및상기폴리머구조물상에형성되는그래핀층;을포함한다.
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