-
公开(公告)号：KR1020110074445A
公开(公告)日：2011-06-30
申请号：KR1020100128502
申请日：2010-12-15
Applicant: 전남대학교산학협력단
IPC: H01L33/28
CPC classification number: H01L33/22 , H01L33/285 , H01L2933/0083
Abstract: PURPOSE: A light-emitting diode of having ZnO nano-structure is provided to improve a light extraction efficiency by applying nano photonic crystal structure of the zinc oxide material to the upper part of a light-emitting structure. CONSTITUTION: In a light-emitting diode of having ZnO nano-structure, a light-emitting structure(120) is formed on a substrate(100). The light-emitting structure is comprised of a buffer layer(121), an n-type junction layer(123), a light-emitting layer(125), and a p-type junction layer(127). An current diffusion layer(130) is formed on the light-emitting structure. A seed layer(140) is formed on the current diffusion layer. A nano photonic crystal(170) is formed on the seed layer.
Abstract translation: 目的：提供一种具有ZnO纳米结构的发光二极管，通过将氧化锌材料的纳米光子晶体结构应用于发光结构的上部来提高光提取效率。 构成：在具有ZnO纳米结构的发光二极管中，在基板（100）上形成发光结构（120）。 发光结构由缓冲层（121），n型结层（123），发光层（125）和p型结层（127）构成。 在发光结构上形成电流扩散层（130）。 种子层（140）形成在电流扩散层上。 在种子层上形成纳米光子晶体（170）。
-
Patent Agency Ranking
公开(公告)号：KR1020100010796A
公开(公告)日：2010-02-02
申请号：KR1020080071837
申请日：2008-07-23
Applicant: 전남대학교산학협력단
Abstract: PURPOSE: A method for manufacturing zinc oxide nanostructures by using the hologram lithography is provided to manufacture simply arranged zinc oxide nanostructures without expensive equipment and to obtain various nanostructures such as nanocrystal, nanorod and nanoholes. CONSTITUTION: A method for manufacturing zinc oxide nanostructures by using a hologram lithography comprises: a step of forming a photoresist(PR) layer in the top of the substrate; a first exposure step of making uniform form by exposing the photoresist layer through the hologram lithography; a second exposure step of exposing the photoresist layer which is the first exposure photoresist layer to obtain uniform form by using the hologram lithography after rotating substrate at the constant angle; the step of forming a nano pattern by developing the photoresist layer; a step of growing the zinc oxide(ZnO) nanostructures on the top of the substrate by using a hydrothermal synthesis method.
Abstract translation: 目的：提供使用全息图光刻制造氧化锌纳米结构的方法，制造简单排列的氧化锌纳米结构，无需昂贵的设备，并可获得纳米晶体，纳米棒和纳米孔等各种纳米结构。 构成：通过使用全息图光刻制造氧化锌纳米结构的方法包括：在衬底的顶部形成光致抗蚀剂（PR）层的步骤; 通过曝光光致抗蚀剂层通过全息图光刻制造均匀形式的第一曝光步骤; 第二曝光步骤，在以恒定角度旋转基板之后，通过使用全息图光刻将作为第一曝光光致抗蚀剂层的光致抗蚀剂层曝光以获得均匀的形状; 通过显影光致抗蚀剂层形成纳米图案的步骤; 通过使用水热合成法在衬底的顶部上生长氧化锌（ZnO）纳米结构的步骤。
-
公开(公告)号：KR1020100096533A
公开(公告)日：2010-09-02
申请号：KR1020090015444
申请日：2009-02-24
Applicant: 전남대학교산학협력단
IPC: H01L31/04
Abstract: PURPOSE: An optical absorption layer for a solar battery and a manufacturing method thereof are provided to improve reliability and yield by depositing SiO2 or the SiNx compound on a thin film through a PECVD(Plasma-Enhanced Chemical Vapor Deposition) method. CONSTITUTION: A predetermined amount of Se is deposited on a thin film according to composition ratio(S100). A protective layer is formed on the deposited Se(S200). The thin film is heat-treated(S300). The protective layer is removed by an etching process(S400). A ternary thin film includes CIS or CIGS. The protective layer is formed by depositing SiO2 or SiNx.
Abstract translation: 目的：提供一种用于太阳能电池的光吸收层及其制造方法，以通过PECVD（等离子体增强化学气相沉积）方法将SiO 2或SiN x化合物沉积在薄膜上来提高可靠性和产率。 构成：按照组成比将预定量的Se沉积在薄膜上（S100）。 在沉积的Se上形成保护层（S200）。 对薄膜进行热处理（S300）。 通过蚀刻工艺去除保护层（S400）。 三元薄膜包括CIS或CIGS。 保护层通过沉积SiO 2或SiN x形成。
-
公开(公告)号：KR1020130100929A
公开(公告)日：2013-09-12
申请号：KR1020130076542
申请日：2013-07-01
Applicant: 전남대학교산학협력단
CPC classification number: G03F7/70283 , G03F7/0163 , G03F7/2022 , G03F7/70408 , H01L21/02601 , H01L21/0273 , H01L29/0665
Abstract: PURPOSE: A production method of a zinc oxide nanostructure using hologram lithography is provided to simply produce the arranged zinc oxide nanostructure without using an expensive device. CONSTITUTION: A production method of a zinc oxide nanostructure using hologram lithography comprises the following steps: forming a photoresist layer on a substrate; firstly exposing the photoresist layer into a predetermined form using hologram lithography; secondly exposing the firstly exposed photoresist layer into a predetermined form using hologram lithography after rotating the substrate into a predetermined angle; forming a nanopattern by developing the photoresist layer; growing the zinc oxide nanostructure on the substrate using a hydrothermal synthesis method; and removing the photoresist layer.
Abstract translation: 目的：提供使用全息图光刻的氧化锌纳米结构的制造方法，以简单地生产排列的氧化锌纳米结构而不使用昂贵的器件。 构成：使用全息图光刻的氧化锌纳米结构的制造方法包括以下步骤：在基板上形成光致抗蚀剂层; 首先使用全息光刻法将光致抗蚀剂层曝光成预定形式; 其次，在将衬底旋转到预定角度之后，使用全息图光刻将第一曝光的光致抗蚀剂层暴露于预定形式; 通过显影光致抗蚀剂层形成纳米图案; 使用水热合成法在衬底上生长氧化锌纳米结构; 并除去光致抗蚀剂层。
-
公开(公告)号：KR100994830B1
公开(公告)日：2010-11-17
申请号：KR1020090015444
申请日：2009-02-24
Applicant: 전남대학교산학협력단
IPC: H01L31/04
CPC classification number: Y02E10/50
Abstract: 본 발명은 태양전지용 광흡수층 및 이의 제조방법에 관한 것으로, 보다 구체적으로는 CIS 또는 CIGS화합물로 이루어진 박막에 SiO
2 또는 SiN
x 화합물을 PECVD(Plasma-enhanced chemical vapor deposition)를 통하여 상기 박막에 증착함으로써, 셀렌(Se)조성을 일정하게 조절하여 높은 수율을 갖는 태양전지용 광흡수층 및 이의 제조방법에 관한 것이다.
태양전지, 광흡수층, CIS, CIGS, 셀레나이제이션(Selenization), Se(Selenium)-
公开(公告)号：KR101203324B1
公开(公告)日：2012-11-20
申请号：KR1020100128502
申请日：2010-12-15
Applicant: 전남대학교산학협력단
IPC: H01L33/28
Abstract: 산화아연 재질의 나노 광 결정이 형성된 발광 다이오드가 개시된다. 나노 광 결정을 형성하기 위해 전류 확산층 또는 발광 구조체 상부에는 씨앗층이 형성된다. 특히, 발광 구조체 상부에 형성되는 씨앗층은 전류 확산층의 기능을 동시에 수행한다. 이를 위해 씨앗층은 알루미늄이 도핑된 산화아연인 AZO로 구성된다. 나노 광 결정은 씨앗층 상부에 홀로그램 리소그래피를 통해 형성된 나노 패턴에 의해 소정의 주기로 형성된다.
-
-
-
-
-
Search Results
6
records
(took 0.03 seconds)
