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1.发明申请公开(公告)号：US20180220518A1
公开(公告)日：2018-08-02
申请号：US15747499
申请日：2016-08-03
Applicant: ASML Netherlands B.V.
Inventor： Alexey Olegovich POLYAKOV , Richard QUINTANILHA , Vadim Yevgenyevich BANINE , Coen Adrianus VERSCHUREN
CPC classification number: H05G2/00 , G03F1/84 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/7085 , G21K1/06 , H01L22/12
Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.
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公开(公告)号：US20230350301A1
公开(公告)日：2023-11-02
申请号：US17800649
申请日：2021-02-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Evgenia KURGANOVA , Gosse Charles DE VRIES , Alexey Olegovich POLYAKOV , Jim Vincent OVERKAMP , Teis Johan COENEN , Tamara DRUZHININA , Sonia CASTELLANOS ORTEGA , Olivier Christian Maurice LUGIER
IPC: G03F7/16 , G03F7/36 , H01L21/027
CPC classification number: G03F7/167 , G03F7/36 , H01L21/027
Abstract: Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a deposition-process material is provided in gaseous form. A layer of the deposition-process material is formed on the substrate by causing condensation or deposition of the gaseous deposition-process material. A selected portion of the layer of deposition-process material is irradiated to modify the deposition-process material in the selected portion.
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公开(公告)号：US20200159134A1
公开(公告)日：2020-05-21
申请号：US16629359
申请日：2018-06-18
Applicant: ASML NETHERLANDS B.V.
Inventor： An GAO , Sanjaysingh LALBAHADOERSING , Audrey Alexandrovich NIKIPELOV , Alexey Olegovich POLYAKOV , Brennan PETERSON
IPC: G03F9/00 , G03F7/20 , H01L23/544
Abstract: An apparatus for determining information relating to at least one target alignment mark in a semiconductor device substrate. The target alignment mark is initially at least partially obscured by an opaque carbon or metal layer on the substrate. The apparatus includes an energy delivery system configured to emit a laser beam for modifying at least one portion of the opaque layer to cause a phase change and/or chemical change in the at least one portion that increases the transparency of the portion. An optical signal can propagate through the modified portion to determine information relating to the target alignment mark.
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4.发明申请公开(公告)号：US20190246480A1
公开(公告)日：2019-08-08
申请号：US16388519
申请日：2019-04-18
Applicant: ASML Netherlands B.V.
Inventor： Alexey Olegovich POLYAKOV , Richard QUINTANILHA , Vadim Yevgenyevich BANINE , Coen Adrianus VERSCHUREN
CPC classification number: H05G2/00 , G03F1/84 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/7085 , G21K1/06 , H01L22/12
Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.
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公开(公告)号：US20210382209A1
公开(公告)日：2021-12-09
申请号：US17282559
申请日：2019-09-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Andrey NIKIPELOV , Marcus Adrianus VAN DE KERKHOF , Pieter-Jan VAN ZWOL , Laurentius Cornelius DE WINTER , Wouter Joep ENGELEN , Alexey Olegovich POLYAKOV
Abstract: A first diffusor configured to receive and transmit radiation has a plurality of layers, each layer arranged to change an angular distribution of EUV radiation passing through it differently. A second diffusor configured to receive and transmit radiation has a first layer and a second layer. The first layer is formed from a first material, the first layer including a nanostructure on at least one surface of the first layer. The second layer is formed from a second material adjacent to the at least one surface of the first layer such that the second layer also includes a nanostructure. The second material has a refractive index that is different to a refractive index of the first layer. The diffusors may be configured to receive and transmit EUV radiation.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20210327678A1
公开(公告)日：2021-10-21
申请号：US17271667
申请日：2019-08-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Ruben Cornelis MAAS , Alexey Olegovich POLYAKOV , Teis Johan COENEN
IPC: H01J37/304 , H01J37/147 , H01J37/302 , H01J37/317 , H01L21/263 , G03F7/20
Abstract: A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.
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公开(公告)号：US20210079519A1
公开(公告)日：2021-03-18
申请号：US16971012
申请日：2019-02-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter Willem Herman DE JAGER , Sander Frederik WUISTER , Marie-Claire VAN LARE , Ruben Cornelis MAAS , Alexey Olegovich POLYAKOV , Tamara DRUZHININA , Victoria VORONINA , Evgenia KURGANOVA , Jim Vincent OVERKAMP , Bernardo KASTRUP , Maarten VAN KAMPEN , Alexandr DOLGOV
IPC: C23C16/04 , C23C16/455 , C23C16/48
Abstract: Methods and apparatuses for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated with electromagnetic radiation having a wavelength of less than 100 nm during a deposition process. Furthermore, an electric field controller is configured to apply an electric field that is oriented so as to force secondary electrons away from the substrate. The irradiation locally drives the deposition process in the selected portion and thereby causes the deposition process to, for example, form a layer of material in a pattern defined by the selected portion.
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公开(公告)号：US20190339615A1
公开(公告)日：2019-11-07
申请号：US16512558
申请日：2019-07-16
Applicant: ASML Netherlands B.V.
Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.
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公开(公告)号：US20220213593A1
公开(公告)日：2022-07-07
申请号：US17600493
申请日：2020-03-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Tamara DRUZHININA , Jim Vincent OVERKAMP , Alexey Olegovich POLYAKOV , Teis Johan COENEN , Evgenia KURGANOVA , Ionel Mugurel CIOBICA , Alexander Ludwig KLEIN , Albertus Victor Gerardus MANGNUS , Marijke SCOTUZZI , Bastiaan Maurice VAN DEN BROEK
Abstract: Methods and apparatus for forming a patterned layer of material are disclosed. In one arrangement, a selected portion of a surface of a substrate is irradiated during a deposition process, the irradiation being such as to locally drive the deposition process in the selected portion to form a layer of deposited material in a pattern defined by the selected portion. The deposited material is annealed to modify the deposited material.
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公开(公告)号：US20210055660A1
公开(公告)日：2021-02-25
申请号：US16977503
申请日：2019-02-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Alexey Olegovich POLYAKOV , Erwin Paul SMAKMAN , Andrey NIKIPELOV , Albertus Victor Gerardus MANGNUS
IPC: G03F7/20 , G01N23/2251 , H01L21/67
Abstract: An inspection system that include a selective deposition tool configured to receive a sample and selectively deposit a material onto the sample, an inspection tool configured to perform an inspection process on the sample provided with the deposited material, and an enclosure configured to enclose the selective deposition tool and the inspection tool.
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