SYSTEMS AND METHODS OF PROFILING CHARGED-PARTICLE BEAMS

    公开(公告)号:US20220392741A1

    公开(公告)日:2022-12-08

    申请号:US17770043

    申请日:2020-10-15

    Abstract: Systems and methods of profiling a charged-particle beam are disclosed. The method of profiling a charged-particle beam may comprise activating a charged-particle source to generate the charged-particle beam along a primary optical axis, modifying the charged-particle beam by adjusting an interaction between the charged-particle beam and a standing optical wave, detecting charged particles from the modified charged-particle beam after the interaction with the standing optical wave, and determining a profile of the charged-particle beam based on the detected charged particles. Alternatively, the method may include activating an optical source, modifying the optical beam by adjusting an interaction between the optical beam and a charged-particle beam, detecting an optical signal from the modified optical beam, and determining a characteristic of the charged-particle beam based on the detected optical signal.

    CHARGED PARTICLE DEVICE, CHARGED PARTICLE ASSESSMENT APPARATUS, MEASURING METHOD, AND MONITORING METHOD

    公开(公告)号:US20240339292A1

    公开(公告)日:2024-10-10

    申请号:US18748758

    申请日:2024-06-20

    CPC classification number: H01J37/244 H01J37/10 H01J37/28

    Abstract: There is provided a charged particle device for a charged particle inspection apparatus for projecting an array of sub-beams towards a sample, the charged particle device comprising: a charged particle optical element and a detector. The charged particle optical element has an up-beam surface having a plurality of openings to generate an array of sub-beams from a charged particle beam. In the charged particle optical element are defined: sub-beam apertures and monitoring apertures. The sub-beam aperture extend through the charged particle element for paths of the array of sub-beams towards a sample. The monitoring aperture extends through the charged particle element. The detector is in the monitoring aperture. At least part of the detector is down-beam of the up-beam surface. The detector measures a parameter of a portion of the charged particle beam incident on the detector.

    APPARATUS FOR DIRECT WRITE MASKLESS LITHOGRAPHY

    公开(公告)号:US20190227442A1

    公开(公告)日:2019-07-25

    申请号:US16314740

    申请日:2017-06-27

    Abstract: An exposure apparatus including: a substrate holder constructed to support a substrate; a patterning device configured to provide radiation modulated according to a desired pattern, the patterning device including an array of radiation source modules configured to project the modulated radiation onto a respective array of exposure regions on the substrate; and a distributed processing system configured to process projection related data to enable the projection of the desired pattern onto the substrate, the distributed processing system including at least one central processing unit and a plurality of module processing units each associated with a respective radiation source module.

    DETERMINING THE COMBINATION OF PATTERNS TO BE APPLIED TO A SUBSTRATE IN A LITHOGRAPHY STEP

    公开(公告)号:US20190339621A1

    公开(公告)日:2019-11-07

    申请号:US16314805

    申请日:2017-06-27

    Abstract: A direct write exposure apparatus configured to process a plurality of substrates, the apparatus including: a substrate holder configured to hold a substrate having a usable patterning area; a patterning system configured to project different patterns onto the substrate; a processing system configured to: determine a first combination of one or more patterns that are to be applied on a first substrate of the plurality of substrates; and determine a second, different combination of one or more patterns that are to be applied on a second, subsequent, substrate of the plurality of substrates.

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