公开(公告)号：US11966167B2

公开(公告)日：2024-04-23

申请号：US16771343

申请日：2018-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Marleen Kooiman ,  David Marie Rio ,  Sander Frederik Wuister

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70666 ,  G03F7/706839

Abstract: A method for calibrating a resist model. The method includes: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resist structure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained by a metrology device. The method includes adjusting one or more of the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.

公开(公告)号：US11635696B2

公开(公告)日：2023-04-25

申请号：US17120506

申请日：2020-12-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Catharinus De Schiffart ,  Michael Jozef Mathijs Renkens ,  Gerard Van Schothorst ,  Andre Bernardus Jeunink ,  Gregor Edward Van Baars ,  Sander Frederik Wuister ,  Yvonne Wendela Kruijt-Stegeman ,  Norbert Erwin Therenzo Jansen ,  Toon Hardeman ,  George Arie Jan De Fockert ,  Johan Frederik Dijksman

IPC: G03F7/20 ,  G03F7/00 ,  G03F9/00

Abstract: An imprint lithography apparatus having a first frame to be mounted on a floor, a second frame mounted on the first frame via a kinematic coupling, an alignment sensor mounted on the second frame, to align an imprint lithography template arrangement with a target portion of a substrate, and a position sensor to measure a position of the imprint lithography template arrangement and/or a substrate stage relative to the second frame.

公开(公告)号：US09958774B2

公开(公告)日：2018-05-01

申请号：US15258903

申请日：2016-09-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey Den Boef ,  Andre Bernardus Jeunink ,  Sander Frederik Wuister ,  Yvonne Wendela Kruijt-Stegeman

IPC: G03F9/00 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7042

Abstract: A method of determining a position of an imprint template in an imprint lithography apparatus is disclosed. In an embodiment, the method includes illuminating an area of the imprint template in which an alignment mark is expected to be found by scanning an alignment radiation beam over that area, detecting an intensity of radiation reflected or transmitted from the area, and identifying the alignment mark via analysis of the detected intensity.

公开(公告)号：US09666443B2

公开(公告)日：2017-05-30

申请号：US14769426

申请日：2014-02-26

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Emiel Peeters

IPC: H01L21/31 ,  H01L21/3105 ,  B81C1/00 ,  H01L21/027 ,  H01L21/033 ,  G03F7/00 ,  H01L21/768

CPC classification number: H01L21/31058 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/76802

Abstract: Causing a self-assemblable block copolymer (BCP) having first and second blocks to migrate from a region surrounding a lithography recess of the substrate and a dummy recess on the substrate to within the lithography recess and the dummy recess, causing the BCP to self-assemble into an ordered layer within the lithography recess, the layer having a first block domain and a second block domain, and selectively removing the first domain to form a lithography feature having the second domain within the lithography recess, wherein a width of the dummy recess is smaller than the minimum width required by the BCP to self-assemble, the dummy recess is within the region of the substrate surrounding the lithography recess from which the BCP is caused to migrate, and the width between portions of a side-wall of the lithography recess is greater than the width between portions of a side-wall of the dummy recess.

公开(公告)号：US09086621B2

公开(公告)日：2015-07-21

申请号：US14391146

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister

IPC: H01L21/311 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00 ,  B44C1/22 ,  C30B19/12 ,  C30B29/58 ,  H01L21/027 ,  H01L21/308 ,  H01L27/11

CPC classification number: G03F7/0002 ,  B44C1/227 ,  B82Y10/00 ,  B82Y40/00 ,  C30B19/12 ,  C30B29/58 ,  G03F7/0035 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/3083 ,  H01L27/11

Abstract: A method is disclosed for forming a row of mutually spaced lithography features on a substrate, such as contact electrodes for a NAND device. The method involves forming and/or using a narrow slot over the substrate defined between the edge of a hard mask layer and a side wall of a trench in a resist layer overlying the edge and the substrate. A self-assemblable block copolymer is deposited and ordered in the trench for use as a further resist for patterning the substrate along the slot. The method allows for a sub-resolution contact array to be formed using UV lithography by overlapping the trench with the hard mask edge to provide the narrow slot in which the contact electrodes may be formed.

Abstract translation: 公开了一种用于在衬底上形成一行相互间隔的光刻特征的方法，例如用于NAND器件的接触电极。 该方法涉及在覆盖边缘和衬底的抗蚀剂层中的在硬掩模层的边缘和沟槽的侧壁之间限定的衬底上形成和/或使用窄缝。 将可自组装的嵌段共聚物沉积并排列在沟槽中，以用作另一抗蚀剂，以沿着该槽形成衬底。 该方法允许使用UV光刻通过将沟槽与硬掩模边缘重叠来形成次分辨率接触阵列，以提供其中可形成接触电极的窄缝隙。

公开(公告)号：US20140245948A1

公开(公告)日：2014-09-04

申请号：US14345891

申请日：2012-10-02

Applicant: ASML Netherlands B.V.

Inventor： Thanh Trung Nguyen ,  Jozef Maria Finders ,  Wilhelmus Sebastianus Marcus Maria Ketelaars ,  Sander Frederik Wuister ,  Eddy Cornelis Antonius Van Der Heijden ,  Hieronymus Johannus Christiaan Meessen ,  Roelof Koole ,  Emiel Peeters ,  Christianus Martinus Van Heesch ,  Aurelie Marie Andree Brizard ,  Henri Marie Joseph Boots ,  Tamara Druzhinina ,  Jessica Marggaretha De Ruiter

IPC: C30B1/12

CPC classification number: C30B1/12 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  Y10T117/10

Abstract: A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

Abstract translation: 用于使自组装嵌段聚合物对准以将其自组装成具有平行于第一轴延伸的不连续第一域的平行排的二维阵列，并且沿着正交的第二轴互相间隔并由连续的第二轴 域。 所述方解石模板具有第一和第二基本上平行的侧壁，所述第一和第二基本平行的侧壁平行于并限定第一轴线并且限定第一轴线并且沿着第二轴线相互间隔延伸，以提供隔室，以将自组装嵌段共聚物的至少一排不连续的第一区域保持在基板上 在侧壁之间并平行于侧壁，并通过连续的第二结构域与之隔开。 隔室具有图案外延成核特征，布置成将隔离物内的特定位置处的不连续的第一结构域中的至少一个定位。 还公开了用于形成图案石墨模板的方法及其用于器件光刻的方法。

公开(公告)号：US20140199485A1

公开(公告)日：2014-07-17

申请号：US14222013

申请日：2014-03-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Ivar SCHRAM ,  Johan Frederik Dijksman ,  Sander Frederik Wuister ,  Yvonne Wendela Kruijt-Stegeman ,  Jeroen Herman Lammers

IPC: B05D5/00

CPC classification number: B05D5/00 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: A method of depositing an imprintable medium onto a target area of a substrate for imprint lithography is disclosed. The method includes moving the substrate, a print head comprising a nozzle to eject an imprintable medium onto the substrate, or both, relative to the other in a first direction across the target area while ejecting a first series of droplets of imprintable medium onto the substrate and moving the substrate, the print head; or both, relative to the other in a second opposing direction across the target area while ejecting a second series of droplets of imprintable medium onto the substrate on or adjacent to droplets from the first series of droplets.

Abstract translation: 公开了一种将可压印介质沉积到用于压印光刻的基板的目标区域上的方法。 该方法包括移动基板，包括喷嘴的打印头，以在横过目标区域的第一方向上相对于另一方弹出可压印介质，同时将可压印介质的第一系列液滴喷射到基板上 并移动基板，打印头; 或两者相对于另一个在相对于目标区域的第二相对方向上，同时在第一系列液滴上或邻近液滴上喷射可压印介质的第二系列液滴到基板上。

公开(公告)号：US11880640B2

公开(公告)日：2024-01-23

申请号：US18118657

申请日：2023-03-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Chrysostomos Batistakis ,  Scott Anderson Middlebrooks ,  Sander Frederik Wuister

IPC: G06F7/50 ,  G06F30/28 ,  G03F7/00 ,  G06F119/14

CPC classification number: G06F30/28 ,  G03F7/705 ,  G06F2119/14

Abstract: A method involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist, performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for an input pattern to the resist deformation model, and producing electronic data representing the deformation of the developed resist pattern for the input pattern.

公开(公告)号：US11668661B2

公开(公告)日：2023-06-06

申请号：US17019149

申请日：2020-09-11

Applicant: ASML Netherlands B.V.

Inventor： Thomas Jarik Huisman ,  Sander Frederik Wuister ,  Hermanus Adrianus Dillen ,  Dorothea Maria Christina Oorschot

IPC: G01N23/2251 ,  G06T7/62 ,  G03F1/84 ,  G03F7/20 ,  G06T7/00 ,  G03F7/00

CPC classification number: G01N23/2251 ,  G03F1/84 ,  G03F7/7085 ,  G03F7/70608 ,  G06T7/0004 ,  G06T7/62 ,  G01N2223/07 ,  G01N2223/401 ,  G01N2223/507 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: Apparatuses, systems, and methods for inspecting a semiconductor sample are disclosed. In some embodiments, the sample may comprise a structure having a plurality of openings in a top layer of the structure. In some embodiments, the method may comprise generating an image of the structure using a SEM; inspecting an opening of the plurality of openings by determining a dimension of the opening based on the image and determining an open-state of the opening, based on a contrast of the image; and determining a quality of the opening based on both the determined dimension and the determined open-state of the opening.

公开(公告)号：US10339260B2

公开(公告)日：2019-07-02

申请号：US14913670

申请日：2014-08-08

Applicant: ASML Netherlands B.V.

Inventor： Bart Laenens ,  Sander Frederik Wuister

IPC: G06F17/50 ,  G03F7/00 ,  G03F1/36

Abstract: A method of determining a characteristic of a guiding template for guiding self-assembly of block copolymer to form an entirety of a design layout, or a portion thereof, including a plurality of design features, each design feature including one or more elemental features, the method including selecting a characteristic of a guiding template for each of the one or more elemental features of the plurality of design features from a database or a computer readable non-transitory medium, the database or the computer readable non-transitory medium storing a characteristic of a guiding template for each of the one or more elemental features, and determining the characteristic of the guiding template to form the entirety of the design layout, or the portion thereof, by combining the selected characteristic of the guiding template for the one or more elemental features for each of the plurality of design features.