公开(公告)号：US20140198972A1

公开(公告)日：2014-07-17

申请号：US14224534

申请日：2014-03-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Luoqi CHEN ,  Antoine Jean BRUGUIER ,  Wenjin SHAO

IPC: G06T3/00

CPC classification number: G06T3/0056 ,  G03F7/705 ,  G03F7/70666 ,  G03F7/70675 ,  G06T7/0004

Abstract: A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.

Abstract translation: 一种用于确定涂覆在基板上的抗蚀剂中的掩模图案的图像的方法，所述方法包括：确定掩模图案在基板层面的空间图像; 以及使用至少两个正交卷积内核卷积该空间图像以确定表示抗蚀剂中的掩模图案的抗蚀剂图像。

公开(公告)号：US20140351773A1

公开(公告)日：2014-11-27

申请号：US14456586

申请日：2014-08-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Wenjin SHAO ,  Ronaldus Johannes Gijsbertus GOOSSENS ,  Jun YE ,  James Patrick KOONMEN

IPC: G06F17/50

CPC classification number: B29C67/0088 ,  B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

Abstract: Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.

Abstract translation: 描述了过程仿真的系统和方法。 这些方法可以使用标识参考扫描仪对一组可调谐参数的灵敏度的参考模型。 可以使用参考模型来模拟来自芯片设计的芯片制造，其中芯片设计被表示为一个或多个掩模。 可以使用迭代重调和仿真过程来优化模拟芯片中的关键尺寸，并获得模拟芯片与预期芯片的收敛。 此外，可以向设计者提供一组结果，从中创建更新的芯片设计。

公开(公告)号：US20140208278A1

公开(公告)日：2014-07-24

申请号：US14246961

申请日：2014-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Wenjin SHAO ,  Jun YE ,  Ronaldus Johannes Gljsbertus GOOSSENS

IPC: G06F17/50 ,  G03F7/20

CPC classification number: G06F17/50 ,  G03F1/14 ,  G03F1/44 ,  G03F1/68 ,  G03F7/70433 ,  G03F7/705 ,  G06F17/10 ,  G06F17/5009

Abstract: The present invention relates generally to methods and apparatuses for test pattern selection for computational lithography model calibration. According to some aspects, the pattern selection algorithms of the present invention can be applied to any existing pool of candidate test patterns. According to some aspects, the present invention automatically selects those test patterns that are most effective in determining the optimal model parameter values from an existing pool of candidate test patterns, as opposed to designing optimal patterns. According to additional aspects, the selected set of test patterns according to the invention is able to excite all the known physics and chemistry in the model formulation, making sure that the wafer data for the test patterns can drive the model calibration to the optimal parameter values that realize the upper bound of prediction accuracy imposed by the model formulation.

Abstract translation: 本发明一般涉及用于计算光刻模型校准的测试图案选择的方法和装置。 根据一些方面，本发明的模式选择算法可以应用于任何现有的候选测试模式池。 根据一些方面，与设计最佳图案相反，本发明自动选择从现有的候选测试图案池中确定最佳模型参数值最有效的测试图案。 根据另外的方面，根据本发明的所选择的一组测试图案能够激发模型配方中的所有已知物理和化学，确保用于测试图案的晶片数据可以将模型校准驱动到最佳参数值 实现了模型公式对预测精度的上限。

公开(公告)号：US20150186557A1

公开(公告)日：2015-07-02

申请号：US14589738

申请日：2015-01-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun YE ,  Yu CAO ,  Hanying FENG ,  Wenjin SHAO

IPC: G06F17/50 ,  G06F17/10

CPC classification number: G06F17/50 ,  G03F1/14 ,  G03F1/44 ,  G03F1/68 ,  G03F7/70433 ,  G03F7/705 ,  G06F17/10 ,  G06F17/5009

Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.

Abstract translation: 根据本发明的方法提供了用于设计用于校准用于模拟过程中的模型的计量模式的计算上有效的技术。 更具体地说，本发明涉及设计规格图案的方法，该图形模式可以用最小数量的量规完成覆盖参数变化，并且在用于对具有多个特征的目标设计进行成像的光刻处理的校准中的对应测量。 根据一些方面，根据本发明的方法包括改变模型参数空间的空间（基于CD灵敏度或Delta TCC），然后迭代地识别在该新空间中与现有计量器的CD灵敏度最正交的方向，以及 确定最敏感的线宽/间距组合与最佳辅助功能放置，导致在模型参数空间中沿着该方向的最敏感的CD变化。

公开(公告)号：US20150045935A1

公开(公告)日：2015-02-12

申请号：US14525704

申请日：2014-10-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Wenjin SHAO ,  Ronaldus Johannes Gijsbertus GOOSSENS ,  Jun YE ,  James Patrick KOONMEN

IPC: B29C67/00

CPC classification number: B29C64/386 ,  G03F7/70091 ,  G03F7/70458 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G06F17/50 ,  G06F17/5009 ,  G06F17/5081

Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.

Abstract translation: 描述用于调整光刻工艺的系统和方法。 保持目标扫描仪的型号，参考一组可调谐参数来定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 可以相对于参考扫描仪的性能来表征相关扫描仪系列的性能。 差分模型可能包括诸如参数偏移和可能用于模拟成像行为差异的其他差异的信息。