公开(公告)号：US20140198972A1

公开(公告)日：2014-07-17

申请号：US14224534

申请日：2014-03-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Luoqi CHEN ,  Antoine Jean BRUGUIER ,  Wenjin SHAO

IPC: G06T3/00

CPC classification number: G06T3/0056 ,  G03F7/705 ,  G03F7/70666 ,  G03F7/70675 ,  G06T7/0004

Abstract: A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.

Abstract translation: 一种用于确定涂覆在基板上的抗蚀剂中的掩模图案的图像的方法，所述方法包括：确定掩模图案在基板层面的空间图像; 以及使用至少两个正交卷积内核卷积该空间图像以确定表示抗蚀剂中的掩模图案的抗蚀剂图像。

公开(公告)号：US20150058815A1

公开(公告)日：2015-02-26

申请号：US14537441

申请日：2014-11-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Hua-Yu LIU ,  Jiangwei LI ,  Luoqi CHEN ,  Wei Liu ,  Jiong Jiang

IPC: G06F17/50

Abstract: A method for reducing an effect of flare produced by a lithographic apparatus for imaging a design layout onto a substrate is described. A flare map in an exposure field of the lithographic apparatus is simulated by mathematically combining a density map of the design layout at the exposure field with a point spread function (PSF), wherein system-specific effects on the flare map may be incorporated in the simulation. Location-dependent flare corrections for the design layout are calculated by using the determined flare map, thereby reducing the effect of flare.

Abstract translation: 描述了一种用于降低由用于将设计布局成像到基板上的光刻设备产生的火炬的影响的方法。 通过将曝光场上的设计布局的密度图与点扩散函数（PSF）进行数学组合来模拟光刻设备的曝光区域中的耀斑图，其中可以在闪光图中对系统特定的影响 模拟。 通过使用确定的耀斑图计算设计布局的位置相关的光斑校正，从而减少了耀斑的影响。

公开(公告)号：US20200218850A1

公开(公告)日：2020-07-09

申请号：US16821048

申请日：2020-03-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Luoqi CHEN ,  Jun YE ,  Yu CAO

IPC: G06F30/398 ,  G03F7/20 ,  G03F1/36 ,  G06F30/39 ,  G03F1/00

Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

公开(公告)号：US20210064811A1

公开(公告)日：2021-03-04

申请号：US17097106

申请日：2020-11-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Peng LIU ,  Yu CAO ,  Luoqi CHEN ,  Jun YE

IPC: G06F30/398 ,  G03F7/20 ,  G06F30/30 ,  G03F1/76 ,  G03F1/50

Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

公开(公告)号：US20150356234A1

公开(公告)日：2015-12-10

申请号：US14822661

申请日：2015-08-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Luoqi CHEN ,  Jun Ye ,  Yu Cao

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/70083 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5068

Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

Abstract translation: 本公开涉及光刻设备和工艺，更具体地涉及用于优化用于光刻设备和工艺的照明源和掩模的工具。 根据某些方面，本公开通过允许直接计算成本函数的梯度来显着加快优化的收敛。 根据其它方面，本公开允许同时优化源和掩码，从而显着加速整体收敛。 根据另外的方面，本公开允许自由形式优化，而不需要常规优化技术所需的约束。

公开(公告)号：US20140365983A1

公开(公告)日：2014-12-11

申请号：US14468635

申请日：2014-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Luoqi CHEN ,  Jun Ye ,  Hong Chen

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70466 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/707

Abstract: The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow.

Abstract translation: 本发明涉及光刻设备和工艺，更具体地涉及用于将目标图案打印超出光刻设备的分辨率限制的多重图形化光刻技术。 公开了一种通过光刻处理将待成像的图案图案分割成多个子图案的方法，其中该方法包括分割步骤，其被配置为意识到在以下过程中的至少一个之间的共优化的要求： 用于光刻工艺的光刻设备的子图案和光学设置。 包括基于衍射特征分析的智能图案选择的设备特征优化技术可以被集成到多个图案化工艺流程中。