公开(公告)号：WO2014013396A2

公开(公告)日：2014-01-23

申请号：PCT/IB2013055728

申请日：2013-07-12

Applicant: BASF SE ,  BASF SCHWEIZ AG ,  BASF CHINA CO LTD

Inventor： KLIPP ANDREAS ,  HONCIUC ANDREI ,  MONTERO PANCERA SABRINA ,  BAAN ZOLTAN

CPC classification number: G03F7/32 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/322

Abstract: Aqueous composition for developing photoresists applied to semiconductor substrates, said aqueous composition comprising a quaternary ammonium compound of formula I wherein (a) R1 is selected from a C4 to C30 organic radical of formula -X-CR10 R11 R12, wherein R10, R11 and R12 are independently selected from a C1 to C20 alkyl and two or three of R10, R11 and R12 may together form a ring system, and R2, R3 and R4 are selected from R1 or a C1 to C10 alkyl, C1 to C10 hydroxyalkyl C1 to 1C30 aminoalkyl or C1 to C20A alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, or (b) R and R2 areindependently selected from an organic radical of formula IIa or IIb (IIa) 20 or wherein Y is C4 to C20 alkanediyl, Y 2 is a one-, two-or tricyclic C to C20 carbocyclic or heterocyclic aromatic system, and R3 and R4 are selected from R or a C to C 10 alkyl, C to C 10 hydroxyalkyl, C to C 30 aminoalkyl, or C to C 20 alkoxyalkyl, and X is a chemical bond or a C to C 4 divalent organic radical, and Xis a chemical bond or a C to C 4 divalent organic radical, or30 (c)at least two of R, R 2, R 3, and R 4 together form a saturated mono, bi or tricyclic C to C 30 organic ring system and the remaining R 3 and R 4, if any, together form a monocyclic C to C 30 organic ring system or are selected from a C to C 10 alkyl, C to C 10 hydroxyalkyl, C to C 30 aminoalkyl, or C to C20 alkoxyalkyl, and Xis a chemical bond or a C1 to C4 divalent organic radical, or 3 (d)a combination thereof, and wherein Z is a counter-ion and z is an integer, which is chosen so that the overall bulky quaternary ammonium compound is electrically uncharged.

Abstract translation: 用于开发应用于半导体衬底的光致抗蚀剂的水性组合物，所述水性组合物包含式I的季铵化合物，其中（a）R 1选自式-X-CR 10 R 11 R 12的C 4至C 30有机基团，其中R 10，R 11和R 12 独立地选自C1至C20烷基，R10，R11和R12中的两个或三个可以一起形成环系，R2，R3和R4选自R1或C1至C10烷基，C1至C10羟烷基C1至1C30 氨基烷基或C1至C20A烷氧基烷基，X为化学键或C1至C4二价有机基团，或（b）R和R 2独立地选自式IIa或IIb（IIa）20的有机基团或其中Y为C4至 C20链烷二基，Y 2是一，二或三环C至C20碳环或杂环芳族体系，R3和R4选自R或C至C10烷基，C至C10羟基烷基，C至C30氨基烷基 或C至C 20烷氧基烷基，X为化学键或C至C 4二价有机物 自由基，X是化学键或C至C 4二价有机基团，或30（c）R，R 2，R 3和R 4中的至少两个一起形成饱和的单，双或三环C至C 30有机基团 环系统，剩余的R 3和R 4（如果有的话）一起形成单环C至C 30有机环系，或选自C 1至C 10烷基，C 1至C 10羟基烷基，C至C 30氨基烷基或C 至20个烷氧基烷基，X为化学键或C1至C4二价有机基团，或3（d）其组合，并且其中Z为抗衡离子，z为整数，其选择为使得整体大体积季 铵化合物是电不带电的。

公开(公告)号：SG192847A1

公开(公告)日：2013-09-30

申请号：SG2013062880

申请日：2012-02-29

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  OETTER GUENTER ,  MONTERO PANCERA SABRINA ,  HONCIUC ANDREI ,  BITTNER CHRISTIAN

Abstract: A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.

公开(公告)号：SG176903A1

公开(公告)日：2012-01-30

申请号：SG2011093721

申请日：2010-06-30

Applicant: BASF SE

Inventor： MONTERO PANCERA SABRINA ,  RIEGER BERNHARD ,  GUNESCH THOMAS MANFRED

Abstract: Method for the phosphine-initialized of hyperbranched polyois AbstractA process for preparing hyperbranched polyols by reacting epoxy alcohols in thepresence of phosphine No suitable figure

公开(公告)号：EP2686737A4

公开(公告)日：2014-09-03

申请号：EP12761512

申请日：2012-02-29

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  OETTER GÜNTER ,  MONTERO PANCERA SABRINA ,  HONCIUC ANDREI ,  BITTNER CHRISTIAN

IPC: G03F7/20 ,  C11D1/00 ,  G03F7/32

CPC classification number: H01L21/3083 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/405

公开(公告)号：EP2875406A4

公开(公告)日：2016-11-09

申请号：EP13819208

申请日：2013-07-12

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  HONCIUC ANDREI ,  MONTERO PANCERA SABRINA ,  BAAN ZOLTAN

IPC: G03F7/32 ,  C11D3/26

CPC classification number: G03F7/32 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/322

公开(公告)号：MY165866A

公开(公告)日：2018-05-18

申请号：MYPI2013003124

申请日：2012-02-29

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  OETTER GÜNTER ,  MONTERO PANCERA SABRINA ,  HONCIUC ANDREI ,  BITTNER CHRISTIAN

IPC: G03F7/40 ,  G03F7/32

Abstract: METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES, THE SAID METHOD COMPRISING THE STEPS OF (1) PROVIDING A SUBSTRATE HAVING PATTERNED MATERIAL LAYERS HAVING LINE-SPACE DIMENSIONS OF 50 NM AND LESS AND ASPECT RATIOS OF >2; (2) PROVIDING THE SURFACE OF THE PATTERNED MATERIAL LAYERS WITH A POSITIVE OR A NEGATIVE ELECTRICAL CHARGE BY CONTACTING THE SUBSTRATE AT LEAST ONCE WITH AN AQUEOUS, FLUORINE-FREE SOLUTION S CONTAINING AT LEAST ONE FLUORINE-FREE CATIONIC SURFACTANT A HAVING AT LEAST ONE CATIONIC OR POTENTIALLY CATIONIC GROUP, AT LEAST ONE FLUORINE-FREE ANIONIC SURFACTANT A HAVING AT LEAST ONE ANIONIC OR POTENTIALLY ANIONIC GROUP, OR AT LEAST ONE FLUORINE-FREE AMPHOTERIC SURFACTANT A; AND (3) REMOVING THE AQUEOUS, FLUORINE-FREE SOLUTION S FROM THE CONTACT WITH THE SUBSTRATE. (FIG.1)

公开(公告)号：SG11201500235XA

公开(公告)日：2015-02-27

申请号：SG11201500235X

申请日：2013-07-12

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  HONCIUC ANDREI ,  MONTERO PANCERA SABRINA ,  BAAN ZOLTAN

IPC: C11D3/26 ,  G03F7/42

Abstract: A composition comprising a quaternary ammonium compound for developing photoresists applied to semiconductor substrates is provided. A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices is also provided. The pattern collapse can be avoided by prevent swelling of the photoresist by using the improved composition.