公开(公告)号：WO2014013396A2

公开(公告)日：2014-01-23

申请号：PCT/IB2013055728

申请日：2013-07-12

Applicant: BASF SE ,  BASF SCHWEIZ AG ,  BASF CHINA CO LTD

Inventor： KLIPP ANDREAS ,  HONCIUC ANDREI ,  MONTERO PANCERA SABRINA ,  BAAN ZOLTAN

CPC classification number: G03F7/32 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/322

Abstract: Aqueous composition for developing photoresists applied to semiconductor substrates, said aqueous composition comprising a quaternary ammonium compound of formula I wherein (a) R1 is selected from a C4 to C30 organic radical of formula -X-CR10 R11 R12, wherein R10, R11 and R12 are independently selected from a C1 to C20 alkyl and two or three of R10, R11 and R12 may together form a ring system, and R2, R3 and R4 are selected from R1 or a C1 to C10 alkyl, C1 to C10 hydroxyalkyl C1 to 1C30 aminoalkyl or C1 to C20A alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, or (b) R and R2 areindependently selected from an organic radical of formula IIa or IIb (IIa) 20 or wherein Y is C4 to C20 alkanediyl, Y 2 is a one-, two-or tricyclic C to C20 carbocyclic or heterocyclic aromatic system, and R3 and R4 are selected from R or a C to C 10 alkyl, C to C 10 hydroxyalkyl, C to C 30 aminoalkyl, or C to C 20 alkoxyalkyl, and X is a chemical bond or a C to C 4 divalent organic radical, and Xis a chemical bond or a C to C 4 divalent organic radical, or30 (c)at least two of R, R 2, R 3, and R 4 together form a saturated mono, bi or tricyclic C to C 30 organic ring system and the remaining R 3 and R 4, if any, together form a monocyclic C to C 30 organic ring system or are selected from a C to C 10 alkyl, C to C 10 hydroxyalkyl, C to C 30 aminoalkyl, or C to C20 alkoxyalkyl, and Xis a chemical bond or a C1 to C4 divalent organic radical, or 3 (d)a combination thereof, and wherein Z is a counter-ion and z is an integer, which is chosen so that the overall bulky quaternary ammonium compound is electrically uncharged.

Abstract translation: 用于开发应用于半导体衬底的光致抗蚀剂的水性组合物，所述水性组合物包含式I的季铵化合物，其中（a）R 1选自式-X-CR 10 R 11 R 12的C 4至C 30有机基团，其中R 10，R 11和R 12 独立地选自C1至C20烷基，R10，R11和R12中的两个或三个可以一起形成环系，R2，R3和R4选自R1或C1至C10烷基，C1至C10羟烷基C1至1C30 氨基烷基或C1至C20A烷氧基烷基，X为化学键或C1至C4二价有机基团，或（b）R和R 2独立地选自式IIa或IIb（IIa）20的有机基团或其中Y为C4至 C20链烷二基，Y 2是一，二或三环C至C20碳环或杂环芳族体系，R3和R4选自R或C至C10烷基，C至C10羟基烷基，C至C30氨基烷基 或C至C 20烷氧基烷基，X为化学键或C至C 4二价有机物 自由基，X是化学键或C至C 4二价有机基团，或30（c）R，R 2，R 3和R 4中的至少两个一起形成饱和的单，双或三环C至C 30有机基团 环系统，剩余的R 3和R 4（如果有的话）一起形成单环C至C 30有机环系，或选自C 1至C 10烷基，C 1至C 10羟基烷基，C至C 30氨基烷基或C 至20个烷氧基烷基，X为化学键或C1至C4二价有机基团，或3（d）其组合，并且其中Z为抗衡离子，z为整数，其选择为使得整体大体积季 铵化合物是电不带电的。

公开(公告)号：EP2686737A4

公开(公告)日：2014-09-03

申请号：EP12761512

申请日：2012-02-29

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  OETTER GÜNTER ,  MONTERO PANCERA SABRINA ,  HONCIUC ANDREI ,  BITTNER CHRISTIAN

IPC: G03F7/20 ,  C11D1/00 ,  G03F7/32

CPC classification number: H01L21/3083 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/405

公开(公告)号：SG11201504607QA

公开(公告)日：2015-07-30

申请号：SG11201504607Q

申请日：2013-12-04

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  HONCIUC ANDREI ,  OETTER GÜNTER ,  BITTNER CHRISTIAN

IPC: H01L21/027

Abstract: In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting.

公开(公告)号：MY171072A

公开(公告)日：2019-09-24

申请号：MYPI2015000076

申请日：2013-07-12

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  HONCIUC ANDREI ,  PANCERA SABRINA MONTERO ,  BAAN ZOLTAN

Abstract: Aqueous composition for developing photoresists applied to semiconductor substrates, said aqueous composition comprising a quaternary ammonium compound of formula I Wherein a) R1 is selected from a C4 to C30 organic radical of formula -X-CR10R11R12, wherein R10, R11 and R12 are independently selected from a C1 to C20 alkyl and two or three of R10, R11 and R12 may together form a ring system, and R2, R3 and R4 are selected from R1 or a C1 to C10 alkyl, C1 to C10 hydroxyalkyl C1 to C30 aminoalkyl or C1 to C20 alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, or b) R1 and R2 are independently selected from an organic radical of formula Ila or lib wherein Y1 is C4 to C20 alkanediyl, Y2 is a one-, two- or tricyclic C5 to C20 carbocyclic or heterocyclic aromatic system, and R3 and R4 are selected from R1 or a C1 to C10 alkyl, C1 to C10 hydroxyalkyl, C1 to C30 aminoalkyl, or C1 to C20 alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, and X is a chemical bond or a C1 to C4 divalent organic radical, or c) at least two of R1, R2, R3, and R4 together form a saturated mono, bi or tricyclic C5 to C30 organic ring system and the remaining R3 and R4, if any, together form a monocyclic C5 to C30 organic ring system or are selected from a C1 to C10 alkyl, C1 to C10 hydroxyalkyl, C1 to C30 aminoalkyl, or C1 to C20 alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, or d) a combination thereof, and wherein Z is a counter-ion and z is an integer, which is chosen so that the overall bulky quaternary ammonium compound is electrically uncharged.

公开(公告)号：SG192847A1

公开(公告)日：2013-09-30

申请号：SG2013062880

申请日：2012-02-29

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  OETTER GUENTER ,  MONTERO PANCERA SABRINA ,  HONCIUC ANDREI ,  BITTNER CHRISTIAN

Abstract: A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm and less and aspect ratios of >2; (2) providing the surface of the patterned material layers with a positive or a negative electrical charge by contacting the substrate at least once with an aqueous, fluorine-free solution S containing at least one fluorine-free cationic surfactant A having at least one cationic or potentially cationic group, at least one fluorine-free anionic surfactant A having at least one anionic or potentially anionic group, or at least one fluorine-free amphoteric surfactant A; and (3) removing the aqueous, fluorine-free solution S from the contact with the substrate.

公开(公告)号：MY184912A

公开(公告)日：2021-04-30

申请号：MYPI2015000032

申请日：2013-07-01

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  BITTNER CHRISTIAN ,  OETTER GUNTER ,  HONCIUC ANDREI

Abstract: The use of a Gemini additive in compositions for treating semiconductor substrates is provided. The compositions are useful in processes for manufacturing integrated circuits devices, optical devices, micromachines and mechanical precision devices, in particular for developing photoresists and post etch residue removal to avoid pattern collapse.

公开(公告)号：SG11201500098XA

公开(公告)日：2015-02-27

申请号：SG11201500098X

申请日：2013-07-01

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  HONCIUC ANDREI ,  OETTER GÜNTER ,  BITTNER CHRISTIAN

IPC: G03F7/32 ,  C11D1/40

Abstract: The use of a gemini additive of the general formula I in compositions for treating semiconductor substrates: in particular for developing photoresists and post etch residue removal to avoid pattern collapse.

公开(公告)号：MY181266A

公开(公告)日：2020-12-21

申请号：MYPI2015001504

申请日：2013-12-04

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  OETTER GUNTER ,  BITTNER CHRISTIAN ,  HONCIUC ANDREI

Abstract: Provided is use of an aqueous composition comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below. Said composition comprising at least one non-ionic surfactant A and at least one hydrophobizer B, wherein the at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration, and the hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5 -95? compared to the contact angle of water to the substrate before such contacting.

公开(公告)号：MY165866A

公开(公告)日：2018-05-18

申请号：MYPI2013003124

申请日：2012-02-29

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  OETTER GÜNTER ,  MONTERO PANCERA SABRINA ,  HONCIUC ANDREI ,  BITTNER CHRISTIAN

IPC: G03F7/40 ,  G03F7/32

Abstract: METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES, THE SAID METHOD COMPRISING THE STEPS OF (1) PROVIDING A SUBSTRATE HAVING PATTERNED MATERIAL LAYERS HAVING LINE-SPACE DIMENSIONS OF 50 NM AND LESS AND ASPECT RATIOS OF >2; (2) PROVIDING THE SURFACE OF THE PATTERNED MATERIAL LAYERS WITH A POSITIVE OR A NEGATIVE ELECTRICAL CHARGE BY CONTACTING THE SUBSTRATE AT LEAST ONCE WITH AN AQUEOUS, FLUORINE-FREE SOLUTION S CONTAINING AT LEAST ONE FLUORINE-FREE CATIONIC SURFACTANT A HAVING AT LEAST ONE CATIONIC OR POTENTIALLY CATIONIC GROUP, AT LEAST ONE FLUORINE-FREE ANIONIC SURFACTANT A HAVING AT LEAST ONE ANIONIC OR POTENTIALLY ANIONIC GROUP, OR AT LEAST ONE FLUORINE-FREE AMPHOTERIC SURFACTANT A; AND (3) REMOVING THE AQUEOUS, FLUORINE-FREE SOLUTION S FROM THE CONTACT WITH THE SUBSTRATE. (FIG.1)

公开(公告)号：SG11201500235XA

公开(公告)日：2015-02-27

申请号：SG11201500235X

申请日：2013-07-12

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  HONCIUC ANDREI ,  MONTERO PANCERA SABRINA ,  BAAN ZOLTAN

IPC: C11D3/26 ,  G03F7/42

Abstract: A composition comprising a quaternary ammonium compound for developing photoresists applied to semiconductor substrates is provided. A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices is also provided. The pattern collapse can be avoided by prevent swelling of the photoresist by using the improved composition.