1.
    发明专利
    未知

    公开(公告)号:AT282895T

    公开(公告)日:2004-12-15

    申请号:AT01128996

    申请日:1993-12-28

    Applicant: CANON KK

    Abstract: An electron source emits electrons as a function of input signals. The electron source comprises a substrate (1), a matrix of wires having m row wires and n column wires laid on the substrate with an insulator layer interposed therebetween, and a plurality of surface-conduction electron-emitting devices each having a pair of electrodes (5,6) and a thin film (4) including an electron emitting region (3) and arranged between the electrodes. The electron-emitting devices are so arranged as to form a matrix with the electrodes connected to the respective row and column wires. Each pixel unit is irradiated by at least two electron beams emitted from the respective electron emitting regions which are juxtaposed with interleaving the higher potential device electrode therebetween and a gap interval W in the juxtaposing direction of which satisfies equation (1) below: K2 x 2H(Vf/Va) ≥ W/2 ≥ K3 x 2H(Vf/Va) where K2 = 1.25 +/- 5.05, K3 = 0.35 +/- 0.05, H is the distance between the surface-conduction electron-emitting devices and the image-forming member, Vf is the voltage applied to the surface-conduction electron-emitting device and Va is the voltage applied to the image-forming member.

    2.
    发明专利
    未知

    公开(公告)号:AT219288T

    公开(公告)日:2002-06-15

    申请号:AT93121009

    申请日:1993-12-28

    Applicant: CANON KK

    Abstract: An electron source emits electrons as a function of input signals. The electron source comprises a substrate (1), a matrix of wires having m row wires and n column wires laid on the substrate with an insulator layer interposed therebetween, and a plurality of surface-conduction electron-emitting devices each having a pair of electrodes (5,6) and a thin film (4) including an electron emitting region (3) and arranged between the electrodes. The electron-emitting devices are so arranged as to form a matrix with the electrodes connected to the respective row and column wires. Each pixel unit is irradiated by at least two electron beams emitted from the respective electron emitting regions which are juxtaposed with interleaving the higher potential device electrode therebetween and a gap interval W in the juxtaposing direction of which satisfies equation (1) below: K2 x 2H(Vf/Va) ≥ W/2 ≥ K3 x 2H(Vf/Va) where K2 = 1.25 +/- 5.05, K3 = 0.35 +/- 0.05, H is the distance between the surface-conduction electron-emitting devices and the image-forming member, Vf is the voltage applied to the surface-conduction electron-emitting device and Va is the voltage applied to the image-forming member.

    4.
    发明专利
    未知

    公开(公告)号:DE69411350T2

    公开(公告)日:1998-11-19

    申请号:DE69411350

    申请日:1994-10-27

    Applicant: CANON KK

    Abstract: This invention relates to an electron source and an image forming apparatus each of which particularly comprises a surface conduction type electron emitting element as an electron emitting element, a method of manufacturing an electron source and an image forming apparatus, in which the energization forming treatment step of the surface conduction type electron emitting element is performed by applying a voltage to an electron emitting portion formation thin film via a nonlinear element connected in series with the thin film and having nonlinear voltage/current characteristics, an electron source and an image forming apparatus in each of which the nonlinear element is connected in series with the surface conduction type electron emitting element, and a method of driving the same. Typical nonlinear elements include rectification and diode elements. In addition an element for removing a noise component superposed on the input signal is connected in series with surface conduction type electron emitting element.

    5.
    发明专利
    未知

    公开(公告)号:AT167958T

    公开(公告)日:1998-07-15

    申请号:AT94307918

    申请日:1994-10-27

    Applicant: CANON KK

    Abstract: This invention relates to an electron source and an image forming apparatus each of which particularly comprises a surface conduction type electron emitting element as an electron emitting element, a method of manufacturing an electron source and an image forming apparatus, in which the energization forming treatment step of the surface conduction type electron emitting element is performed by applying a voltage to an electron emitting portion formation thin film via a nonlinear element connected in series with the thin film and having nonlinear voltage/current characteristics, an electron source and an image forming apparatus in each of which the nonlinear element is connected in series with the surface conduction type electron emitting element, and a method of driving the same. Typical nonlinear elements include rectification and diode elements. In addition an element for removing a noise component superposed on the input signal is connected in series with surface conduction type electron emitting element.

    6.
    发明专利
    未知

    公开(公告)号:AT155283T

    公开(公告)日:1997-07-15

    申请号:AT94105197

    申请日:1994-03-31

    Applicant: CANON KK

    Abstract: An electron source comprises a substrate, at least one row-directional wire, at least one column-directional wire intersecting the row-directional wire, at least one insulation layer arranged at the crossing(s) of the at least one row-directional wire and the at least one column-directional wire, and at least one conductive film having an electron-emitting region also arranged at the crossing(s). The insulation layer is arranged between the row-directional wire and the column-directional wire and the conductive film is connected to both the wires.

    8.
    发明专利
    未知

    公开(公告)号:DE69116202D1

    公开(公告)日:1996-02-22

    申请号:DE69116202

    申请日:1991-04-09

    Applicant: CANON KK

    Abstract: A method of forming a semiconductor thin film based on crystallizing a thin film crystal from an amorphous thin film by solid phase growth. A plurality of small regions which are preferentially made nuclei generation points are formed at predetermined positions in the amorphous thin film. Solid phase growth from single nuclei formed in the small regions is preferentially effected by heating to form a crystalline semiconductor thin film in which the grain boundary positions are adjusted to the desired positions. This crystalline semiconductor thin film is subjected to a heat treatment to reduce defects in crystal grains.

    9.
    发明专利
    未知

    公开(公告)号:DE3750855D1

    公开(公告)日:1995-01-26

    申请号:DE3750855

    申请日:1987-02-23

    Applicant: CANON KK

    Abstract: A display apparatus, comprises a plurality of pixels arranged in pluralities of rows and columns a plurality of first control lines each connecting a column of pixels in common, and a plurality of second control lines each connecting a row of pixels in common. The first control lines are divided into a plurality of blocks. Third control lines are disposed so that the first control lines in each of the blocks are commonly connected by a third control line. A multiplexing switching element is disposed at each connection between the third control lines and the first control lines. Further, a difference in output voltage between two multiplexing switching elements disposed at a boundary between a neighboring pair of blocks is 50 mV or less.

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