PATTERN FORMING METHOD AND METHOD OF MANUFACTURING ARTICLE

    公开(公告)号:EP3195061A4

    公开(公告)日:2018-08-01

    申请号:EP15847291

    申请日:2015-09-11

    Applicant: CANON KK

    CPC classification number: G03F9/7042 B41F7/00 G03F7/0002 G03F7/7045 G03F9/7038

    Abstract: The present invention provides a pattern forming method of forming a plurality of pattern layers on a substrate by using a plurality of lithography apparatuses including a first lithography apparatus and a second lithography apparatus, the method comprising a first step of forming a first pattern layer by the first lithography apparatus which adopts a die-by-die alignment method, based on alignment information obtained by using the die-by-die alignment method for a plurality of marks formed on the substrate by a lithography apparatus which adopts a global alignment method, and a second step of forming a second pattern layer so as to overlap with the first pattern layer by the second lithography apparatus, based on alignment information obtained by using the global alignment method for a plurality of shot regions formed on the substrate by the first lithography apparatus in the first step.

    2.
    发明专利
    未知

    公开(公告)号:DE69512625T2

    公开(公告)日:2000-04-06

    申请号:DE69512625

    申请日:1995-12-27

    Applicant: CANON KK

    Abstract: An illumination system includes a light source (1) for providing pulse light, and a scanning system for relatively and scanningly moving an article (11), to be illuminated, relative to an illumination region to be defined by the pulse light, wherein, in a light intensity distribution defined in the illumination region with respect to a scan direction, the light intensity changes non-linearly from at least one end portion to a highest light intensity point in the distribution, wherein the light intensity distribution includes a first point at the one end portion, a second point whereat light intensity increase changes, a third point whereat light intensity increase changes, and a fourth point whereat the light intensity is highest, and wherein at least one of the width Wa between the first and second points and the width Wb between the third and fourth points substantially corresponds to or is greater than the relative movement amount between the illumination region and the article per pulse.

    3.
    发明专利
    未知

    公开(公告)号:DE69031699T2

    公开(公告)日:1998-04-02

    申请号:DE69031699

    申请日:1990-07-11

    Applicant: CANON KK

    Abstract: A substrate holding device includes a holding table having a reduced pressure passageway; a pressure gauge for measuring a value related to the pressure in the reduced pressure passageway; a pump for producing a pressure difference between a first surface of the substrate to be attracted to the holding table and a second surface of the substrate not to be attracted to the holding table; a valve which can be opened/closed for control of the pressure in the reduced pressure passageway; a pressure control system for controlling the opening/closing of the valve on the basis of an output corresponding to the value measured by the pressure gauge; and a temperature control system for controlling the temperature of the holding table.

    5.
    发明专利
    未知

    公开(公告)号:DE3750855T2

    公开(公告)日:1995-05-24

    申请号:DE3750855

    申请日:1987-02-23

    Applicant: CANON KK

    Abstract: A display apparatus, comprises a plurality of pixels arranged in pluralities of rows and columns a plurality of first control lines each connecting a column of pixels in common, and a plurality of second control lines each connecting a row of pixels in common. The first control lines are divided into a plurality of blocks. Third control lines are disposed so that the first control lines in each of the blocks are commonly connected by a third control line. A multiplexing switching element is disposed at each connection between the third control lines and the first control lines. Further, a difference in output voltage between two multiplexing switching elements disposed at a boundary between a neighboring pair of blocks is 50 mV or less.

    7.
    发明专利
    未知

    公开(公告)号:DE69033002T2

    公开(公告)日:1999-09-02

    申请号:DE69033002

    申请日:1990-10-01

    Applicant: CANON KK

    Abstract: An exposure apparatus includes a chamber (1) for placing the article in a predetermined ambience; holding device (5) for holding the article in the chamber; a fluid supplying device (3) for supplying a temperature adjusting fluid into the holding device through a flow passageway (4); a detecting device (2) for detecting leakage of the fluid from the flow passageway; and a flow rate controlling device (9) for controlling the flow rate of the fluid to be supplied to the holding device on the basis of detection by the detecting device.

    8.
    发明专利
    未知

    公开(公告)号:DE68927364T2

    公开(公告)日:1997-03-06

    申请号:DE68927364

    申请日:1989-08-31

    Applicant: CANON KK

    Abstract: A wafer chuck (2) usable with a semiconductor exposure apparatus (Fig.2A) wherein a mask and a semiconductor wafer (1) are placed in a vacuum ambience or a pressure-reduced gas ambience, and wherein the wafer (1) is exposed through the mask to radiation energy such as X-rays contained in a synchrotron radiation beam, by which the pattern of the mask is transferred onto the wafer (1). The wafer (1) is first attracted on the wafer supporting surface of the chuck (2) by vacuum attraction (21), and thereafter, the wafer (1) is attracted by electrostatic attraction force. Thereafter, the vacuum attraction is broken by supplying (24) a gas. Preferably Helium or other thermally conductive gas is admitted at this point. When the pattern of the mask is transferred onto the wafer (1), the wafer (1) is retained on the wafer supporting surface (20) by the electrostatic attraction force only. By this, the wafer supporting apparatus can correctly contact the wafer supporting surface (20) to the wafer (1) without being influenced by the undulation of the wafer (1). In addition, the heat produced in the wafer (1) during exposure can be removed efficiently by temperature controlled (23) water (11) supplied to the wafer supporting apparatus (2).

    10.
    发明专利
    未知

    公开(公告)号:DE69512625D1

    公开(公告)日:1999-11-11

    申请号:DE69512625

    申请日:1995-12-27

    Applicant: CANON KK

    Abstract: An illumination system includes a light source (1) for providing pulse light, and a scanning system for relatively and scanningly moving an article (11), to be illuminated, relative to an illumination region to be defined by the pulse light, wherein, in a light intensity distribution defined in the illumination region with respect to a scan direction, the light intensity changes non-linearly from at least one end portion to a highest light intensity point in the distribution, wherein the light intensity distribution includes a first point at the one end portion, a second point whereat light intensity increase changes, a third point whereat light intensity increase changes, and a fourth point whereat the light intensity is highest, and wherein at least one of the width Wa between the first and second points and the width Wb between the third and fourth points substantially corresponds to or is greater than the relative movement amount between the illumination region and the article per pulse.

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